Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content

Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content

Abstract (AlxGa1–x)2O3 is an ultrawide‐bandgap semiconductor with a high critical electric field for next‐generation high‐power transistors and deep‐ultraviolet photodetectors. While (010)‐(AlxGa1–x)2O3 films have been studied, the recent availability of (100), (2¯01)‐Ga2O3 substrates have developed...

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Bibliographic Details
Main Authors: Jith Sarker, Prachi Garg, Abrar Rauf, Ahsiur Rahman Nirjhar, Hsien‐Lien Huang, Menglin Zhu, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hongping Zhao, Jinwoo Hwang, Eric Osei‐Agyemang, Saquib Ahmed, Baishakhi Mazumder
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Materials Interfaces
Subjects:
atom probe tomography
first principle calculation
semiconductor
ultrawide‐bandgap material
Online Access:https://doi.org/10.1002/admi.202301016
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