Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity Enhancements
Abstract Electrolyte‐gated field‐effect transistors (EGFETs) based on transition metal dichalcogenides (TMDCs) are promising for biosensing applications due to their high transconductance (1.98 mS) and surface sensitivity enabling the detection of minute interfacial changes. However, their stability...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-12-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400748 |
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| author | Steffen Rühl Giovanni Ligorio Max Heyl Emil J. W. List‐Kratochvil |
| author_facet | Steffen Rühl Giovanni Ligorio Max Heyl Emil J. W. List‐Kratochvil |
| author_sort | Steffen Rühl |
| collection | DOAJ |
| description | Abstract Electrolyte‐gated field‐effect transistors (EGFETs) based on transition metal dichalcogenides (TMDCs) are promising for biosensing applications due to their high transconductance (1.98 mS) and surface sensitivity enabling the detection of minute interfacial changes. However, their stability in aqueous poses significant challenges for long‐term reliability. This work presents a study to anhance both the stability and performance of TMDC‐based EGFETs. Initial devices showed promising performance but suffered significant instability during prolonged aqueos operation, limiting their biosensing applications. Postmortem analysis identified key areas for improvement leadinf to three major modifications: 1) a double‐junction Ag/AgCl electrode to prevent ion leakage, 2) a protective resist layer to shields the monolayer, and 3) precise etching to confine the semiconductor material, reducing parasitic currents. These optimizations imroved the devices' transconductance and ensured stable operation over extended periods establishing TMDC‐based EGFETs as viable candidates for reliable biosensing in aqueous environments. |
| format | Article |
| id | doaj-art-7ff52c0d02ad4e77842ce2b5b5e2d631 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-7ff52c0d02ad4e77842ce2b5b5e2d6312025-01-09T11:51:14ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-12-011012n/an/a10.1002/aelm.202400748Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity EnhancementsSteffen Rühl0Giovanni Ligorio1Max Heyl2Emil J. W. List‐Kratochvil3Humboldt‐Universität zu Berlin Institut für Physik Institut für Chemie Center for the Science of Materials Berlin Zum Großen Windkanal 2 12489 Berlin GermanyHumboldt‐Universität zu Berlin Institut für Physik Institut für Chemie Center for the Science of Materials Berlin Zum Großen Windkanal 2 12489 Berlin GermanyHumboldt‐Universität zu Berlin Institut für Physik Institut für Chemie Center for the Science of Materials Berlin Zum Großen Windkanal 2 12489 Berlin GermanyHumboldt‐Universität zu Berlin Institut für Physik Institut für Chemie Center for the Science of Materials Berlin Zum Großen Windkanal 2 12489 Berlin GermanyAbstract Electrolyte‐gated field‐effect transistors (EGFETs) based on transition metal dichalcogenides (TMDCs) are promising for biosensing applications due to their high transconductance (1.98 mS) and surface sensitivity enabling the detection of minute interfacial changes. However, their stability in aqueous poses significant challenges for long‐term reliability. This work presents a study to anhance both the stability and performance of TMDC‐based EGFETs. Initial devices showed promising performance but suffered significant instability during prolonged aqueos operation, limiting their biosensing applications. Postmortem analysis identified key areas for improvement leadinf to three major modifications: 1) a double‐junction Ag/AgCl electrode to prevent ion leakage, 2) a protective resist layer to shields the monolayer, and 3) precise etching to confine the semiconductor material, reducing parasitic currents. These optimizations imroved the devices' transconductance and ensured stable operation over extended periods establishing TMDC‐based EGFETs as viable candidates for reliable biosensing in aqueous environments.https://doi.org/10.1002/aelm.202400748Ag/AgCl reference electrodeEGFETMoS2silver nano particlesTMDCwater |
| spellingShingle | Steffen Rühl Giovanni Ligorio Max Heyl Emil J. W. List‐Kratochvil Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity Enhancements Advanced Electronic Materials Ag/AgCl reference electrode EGFET MoS2 silver nano particles TMDC water |
| title | Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity Enhancements |
| title_full | Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity Enhancements |
| title_fullStr | Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity Enhancements |
| title_full_unstemmed | Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity Enhancements |
| title_short | Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity Enhancements |
| title_sort | optimizing mos2 electrolyte gated transistors stability performance and sensitivity enhancements |
| topic | Ag/AgCl reference electrode EGFET MoS2 silver nano particles TMDC water |
| url | https://doi.org/10.1002/aelm.202400748 |
| work_keys_str_mv | AT steffenruhl optimizingmos2electrolytegatedtransistorsstabilityperformanceandsensitivityenhancements AT giovanniligorio optimizingmos2electrolytegatedtransistorsstabilityperformanceandsensitivityenhancements AT maxheyl optimizingmos2electrolytegatedtransistorsstabilityperformanceandsensitivityenhancements AT emiljwlistkratochvil optimizingmos2electrolytegatedtransistorsstabilityperformanceandsensitivityenhancements |