Patterning by Selective Etching of Poly-Silicon Using a High Etch Rate Single Sided Gaseous Process
This paper presents etching process developments using a single-side gaseous etch process based on the thermal reaction of poly-Silicon and the etching gas (molecular fluorine), that results in a high etching selectivity between layers, and a high etching rate. This work was carried out in the cont...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
TIB Open Publishing
2024-12-01
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| Series: | SiliconPV Conference Proceedings |
| Subjects: | |
| Online Access: | https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1317 |
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