Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors
Abstract Mitigating the oxidation susceptibility of Sn remains a critical issue for improving the environmental stability of lead-free perovskites. Herein, we show that the oxidized surface layer of Sn-based perovskites can be utilized to improve transistor performance, rather than being entirely su...
Saved in:
| Main Authors: | , , , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-08-01
|
| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-62770-2 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849234448479944704 |
|---|---|
| author | Seonkwon Kim Su Hyun Kim Hui Ung Hwang Jeongmin Kim Jeong Won Kim In Cheol Kwak Byeongjae Kang Seungjae Lee Sae Byeok Jo Du Yeol Ryu Hyunjung Kim Jae-Min Myoung Moon Sung Kang Saeroonter Oh Jeong Ho Cho |
| author_facet | Seonkwon Kim Su Hyun Kim Hui Ung Hwang Jeongmin Kim Jeong Won Kim In Cheol Kwak Byeongjae Kang Seungjae Lee Sae Byeok Jo Du Yeol Ryu Hyunjung Kim Jae-Min Myoung Moon Sung Kang Saeroonter Oh Jeong Ho Cho |
| author_sort | Seonkwon Kim |
| collection | DOAJ |
| description | Abstract Mitigating the oxidation susceptibility of Sn remains a critical issue for improving the environmental stability of lead-free perovskites. Herein, we show that the oxidized surface layer of Sn-based perovskites can be utilized to improve transistor performance, rather than being entirely suppressed. We report perovskite-IGZO junction field-effect transistors that use this oxidized layer to suppress gate current to below 10−10 A, enabling enhancement-mode operation. We refer to these as barriered junction field-effect transistors. The combination of the gate leakage suppression and high polarizability of the perovskite layer results in a field-effect mobility of 29.4 cm2V−1s−1, subthreshold swing of 67.1 mV dec−1, and on/off current ratio exceeding 105 under ≤1 V operation. These devices maintain stable operation in ambient conditions. Furthermore, we demonstrate their applicability by constructing logic gates such as NOT, NOR and NAND. These findings highlight the potential of exploiting Sn-based perovskite oxidation to advance electronic devices. |
| format | Article |
| id | doaj-art-762a8de6c46f427fb15a59e93bf4f95f |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-762a8de6c46f427fb15a59e93bf4f95f2025-08-20T04:03:07ZengNature PortfolioNature Communications2041-17232025-08-0116111010.1038/s41467-025-62770-2Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistorsSeonkwon Kim0Su Hyun Kim1Hui Ung Hwang2Jeongmin Kim3Jeong Won Kim4In Cheol Kwak5Byeongjae Kang6Seungjae Lee7Sae Byeok Jo8Du Yeol Ryu9Hyunjung Kim10Jae-Min Myoung11Moon Sung Kang12Saeroonter Oh13Jeong Ho Cho14Department of Chemical and Biomolecular Engineering, Yonsei UniversityDepartment of Electrical and Computer Engineering, Sungkyunkwan UniversityKorea Research Institute of Standards and Science (KRISS)Division of Nanotechnology, DGISTKorea Research Institute of Standards and Science (KRISS)Department of Chemical and Biomolecular Engineering, Yonsei UniversityDepartment of Physics, Center for Ultrafast Phase Transformation, Sogang UniversityDepartment of Chemical and Biomolecular Engineering, Yonsei UniversitySchool of Chemical Engineering, Sungkyunkwan University (SKKU)Department of Chemical and Biomolecular Engineering, Yonsei UniversityDepartment of Physics, Center for Ultrafast Phase Transformation, Sogang UniversityDepartment of Materials Science and Engineering, Yonsei UniversityDepartment of Chemical and Biomolecular Engineering, Sogang UniversityDepartment of Semiconductor Convergence Engineering, Sungkyunkwan UniversityDepartment of Chemical and Biomolecular Engineering, Yonsei UniversityAbstract Mitigating the oxidation susceptibility of Sn remains a critical issue for improving the environmental stability of lead-free perovskites. Herein, we show that the oxidized surface layer of Sn-based perovskites can be utilized to improve transistor performance, rather than being entirely suppressed. We report perovskite-IGZO junction field-effect transistors that use this oxidized layer to suppress gate current to below 10−10 A, enabling enhancement-mode operation. We refer to these as barriered junction field-effect transistors. The combination of the gate leakage suppression and high polarizability of the perovskite layer results in a field-effect mobility of 29.4 cm2V−1s−1, subthreshold swing of 67.1 mV dec−1, and on/off current ratio exceeding 105 under ≤1 V operation. These devices maintain stable operation in ambient conditions. Furthermore, we demonstrate their applicability by constructing logic gates such as NOT, NOR and NAND. These findings highlight the potential of exploiting Sn-based perovskite oxidation to advance electronic devices.https://doi.org/10.1038/s41467-025-62770-2 |
| spellingShingle | Seonkwon Kim Su Hyun Kim Hui Ung Hwang Jeongmin Kim Jeong Won Kim In Cheol Kwak Byeongjae Kang Seungjae Lee Sae Byeok Jo Du Yeol Ryu Hyunjung Kim Jae-Min Myoung Moon Sung Kang Saeroonter Oh Jeong Ho Cho Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors Nature Communications |
| title | Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors |
| title_full | Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors |
| title_fullStr | Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors |
| title_full_unstemmed | Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors |
| title_short | Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors |
| title_sort | revisiting the role of oxidation in stable and high performance lead free perovskite igzo junction field effect transistors |
| url | https://doi.org/10.1038/s41467-025-62770-2 |
| work_keys_str_mv | AT seonkwonkim revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT suhyunkim revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT huiunghwang revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT jeongminkim revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT jeongwonkim revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT incheolkwak revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT byeongjaekang revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT seungjaelee revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT saebyeokjo revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT duyeolryu revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT hyunjungkim revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT jaeminmyoung revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT moonsungkang revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT saeroonteroh revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors AT jeonghocho revisitingtheroleofoxidationinstableandhighperformanceleadfreeperovskiteigzojunctionfieldeffecttransistors |