Current mirror with charge dissipation transistor for analogue single‐event transient mitigation in space application
Abstract Current mirror utilizing an extra transistor for single‐event‐induced charge dissipation is proposed. This technique involves two inverters and a dissipation transistor. The inverters are employed as a sensor that turns on the dissipation transistor when heavy ion hits the sensitive node, a...
Saved in:
Main Authors: | Jingtian Liu, Bin Liang, Jianjun Chen, Yaqing Chi, Li Yan, Yang Guo |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2021-03-01
|
Series: | IET Circuits, Devices and Systems |
Online Access: | https://doi.org/10.1049/cds2.12012 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit
by: Arumugam Karthigeyan, et al.
Published: (2022-03-01) -
Study on Single Event Transients in Amplifier for Switched-Capacitor Circuits in CMOS Technology
by: Ming Yan, et al.
Published: (2025-01-01) -
A Study of Charged Cylindrical Gravitational Collapse with Dissipative Fluid
by: Sanjukta Chakraborty, et al.
Published: (2017-01-01) -
Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions
by: Iman Chahardah Cherik, et al.
Published: (2025-02-01) -
Study on Single Event Upset and Mitigation Technique in JLTFET-Based 6T SRAM Cell
by: Aishwarya K, et al.
Published: (2024-01-01)