Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2
Abstract Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n‐type 2D materials like MoS2 and WS2, while p‐type 2D materials such as WSe2 remain relatively unexplored. Here, the impact of controlled mechanical strain on the electron transport characte...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-11-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400225 |
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| author | Md Akibul Islam Eric Nicholson Nima Barri Momoko Onodera Danny Starkov Peter Serles Shuo He Boran Kumral Ali Zavabeti Haleh Shahsa Teng Cui Guorui Wang Tomoki Machida C.V. Singh Tobin Filleter |
| author_facet | Md Akibul Islam Eric Nicholson Nima Barri Momoko Onodera Danny Starkov Peter Serles Shuo He Boran Kumral Ali Zavabeti Haleh Shahsa Teng Cui Guorui Wang Tomoki Machida C.V. Singh Tobin Filleter |
| author_sort | Md Akibul Islam |
| collection | DOAJ |
| description | Abstract Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n‐type 2D materials like MoS2 and WS2, while p‐type 2D materials such as WSe2 remain relatively unexplored. Here, the impact of controlled mechanical strain on the electron transport characteristics of both mono and bi‐layer WSe2 is studied. Through coupling atomic force microscopy (AFM) nanoindentation techniques and conductive AFM, the ability to finely tune the electronic band structure of WSe2 is demonstrated. The research offers valuable mechanistic insights into understanding how WSe2's electronic properties respond to mechanical strain, a critical prerequisite for the development of flexible photoelectronic devices. It is also observed that under high pressure, the AFM tip/monolayer WSe2/metal substrate junction transitions from Schottky to Ohmic contact, attributed to significant charge injection from the substrate to the WSe2. These findings are significant for designing efficient metal/semiconductor contact in thin and flexible PMOS (p‐type Metal–Oxide–Semiconductor) devices. |
| format | Article |
| id | doaj-art-742fadabfcbe4dc5a180a1b1480f7c83 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-742fadabfcbe4dc5a180a1b1480f7c832024-11-09T18:01:03ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-11-011011n/an/a10.1002/aelm.202400225Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2Md Akibul Islam0Eric Nicholson1Nima Barri2Momoko Onodera3Danny Starkov4Peter Serles5Shuo He6Boran Kumral7Ali Zavabeti8Haleh Shahsa9Teng Cui10Guorui Wang11Tomoki Machida12C.V. Singh13Tobin Filleter14Department of Mechanical and Industrial Engineering University of Toronto Toronto ON M5S 3E4 CanadaDepartment of Material Science and Engineering University of Toronto Toronto ON M5S 3E4 CanadaDepartment of Mechanical and Industrial Engineering University of Toronto Toronto ON M5S 3E4 CanadaInstitute of Industrial Science, Basic Systems Department The University of Tokyo Tokyo 153‐8505 JapanDepartment of Mechanical and Industrial Engineering University of Toronto Toronto ON M5S 3E4 CanadaDepartment of Mechanical and Industrial Engineering University of Toronto Toronto ON M5S 3E4 CanadaDepartment of Mechanical and Industrial Engineering University of Toronto Toronto ON M5S 3E4 CanadaDepartment of Mechanical and Industrial Engineering University of Toronto Toronto ON M5S 3E4 CanadaDepartment of Chemical Engineering University of Melbourne Parkville Victoria 3010 AustraliaDepartment of Mechanical and Industrial Engineering University of Toronto Toronto ON M5S 3E4 CanadaDepartment of Mechanical Engineering Stanford University CA 94305 USADepartment of Modern Mechanics University of Science and Technology Hefei 230027 ChinaInstitute of Industrial Science, Basic Systems Department The University of Tokyo Tokyo 153‐8505 JapanDepartment of Material Science and Engineering University of Toronto Toronto ON M5S 3E4 CanadaDepartment of Mechanical and Industrial Engineering University of Toronto Toronto ON M5S 3E4 CanadaAbstract Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n‐type 2D materials like MoS2 and WS2, while p‐type 2D materials such as WSe2 remain relatively unexplored. Here, the impact of controlled mechanical strain on the electron transport characteristics of both mono and bi‐layer WSe2 is studied. Through coupling atomic force microscopy (AFM) nanoindentation techniques and conductive AFM, the ability to finely tune the electronic band structure of WSe2 is demonstrated. The research offers valuable mechanistic insights into understanding how WSe2's electronic properties respond to mechanical strain, a critical prerequisite for the development of flexible photoelectronic devices. It is also observed that under high pressure, the AFM tip/monolayer WSe2/metal substrate junction transitions from Schottky to Ohmic contact, attributed to significant charge injection from the substrate to the WSe2. These findings are significant for designing efficient metal/semiconductor contact in thin and flexible PMOS (p‐type Metal–Oxide–Semiconductor) devices.https://doi.org/10.1002/aelm.202400225bandgap tuningcAFMstrain engineeringtransition metal di chalcogenides (TMDs) |
| spellingShingle | Md Akibul Islam Eric Nicholson Nima Barri Momoko Onodera Danny Starkov Peter Serles Shuo He Boran Kumral Ali Zavabeti Haleh Shahsa Teng Cui Guorui Wang Tomoki Machida C.V. Singh Tobin Filleter Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2 Advanced Electronic Materials bandgap tuning cAFM strain engineering transition metal di chalcogenides (TMDs) |
| title | Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2 |
| title_full | Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2 |
| title_fullStr | Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2 |
| title_full_unstemmed | Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2 |
| title_short | Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2 |
| title_sort | strain driven electrical bandgap tuning of atomically thin wse2 |
| topic | bandgap tuning cAFM strain engineering transition metal di chalcogenides (TMDs) |
| url | https://doi.org/10.1002/aelm.202400225 |
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