Large-area single-crystal indium phosphide laterally grown on patterned silicon-on-insulator

Large-area single-crystal indium phosphide laterally grown on patterned silicon-on-insulator

Selective area heteroepitaxy provides an alternate solution for the monolithic integration of high-performance III-V lasers on Si with effective management of crystalline defects. Here, we report large-area single-crystal InP grown on (001) patterned silicon-on-insulator (SOI) wafers using the later...

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Bibliographic Details
Main Authors: Jie Li, Ying Xue, Ke Xu, Zengshan Xing, Kam Sing Wong, Kei May Lau
Format: Article
Language:English
Published: AIP Publishing LLC 2024-11-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0232263
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