Large-area single-crystal indium phosphide laterally grown on patterned silicon-on-insulator
Selective area heteroepitaxy provides an alternate solution for the monolithic integration of high-performance III-V lasers on Si with effective management of crystalline defects. Here, we report large-area single-crystal InP grown on (001) patterned silicon-on-insulator (SOI) wafers using the later...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0232263 |
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