Study of the Formation of Low-Dimensional Defect States in Single-Crystal Silicon with the Participation of Oxygen

Study of the Formation of Low-Dimensional Defect States in Single-Crystal Silicon with the Participation of Oxygen

This study investigates the formation of low-dimensional defect states in monocrystalline silicon involving oxygen, focusing on structural inhomogeneities and their impact on material properties. Monocrystalline silicon, a cornerstone of modern nanoelectronics, is primarily produced using the Czochr...

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Bibliographic Details
Main Authors: Akramjon Y. Boboev, Biloliddin M. Ergashev, Nuritdin Y. Yunusaliyev, Murodiljon M. Xotamov
Format: Article
Language:English
Published: V.N. Karazin Kharkiv National University Publishing 2025-06-01
Series:East European Journal of Physics
Subjects:
monocrystalline silicon
czochralski method
defect states
x-ray diffraction
crystallographic orientation
subcrystalline structures
microdefects
cluster formation
Online Access:https://periodicals.karazin.ua/eejp/article/view/25836
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