Growth and Characterization of Ge100-xDyx(x≤2) Nanowires

Novel semiconducting Germanium-Dysprosium nanowires are fabricated by a combined two-step method, which consists of initial arc-melting of the elemental constituents into a pellet and its heat treatment, followed by thermal vapor transport of the powdered pellet in a tube reactor for fabrication of...

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Main Authors: K. B. Paul, G. I. Athanasopoulos, C. C. Doumanidis, C. Rebholz
Format: Article
Language:English
Published: Wiley 2010-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2010/107192
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author K. B. Paul
G. I. Athanasopoulos
C. C. Doumanidis
C. Rebholz
author_facet K. B. Paul
G. I. Athanasopoulos
C. C. Doumanidis
C. Rebholz
author_sort K. B. Paul
collection DOAJ
description Novel semiconducting Germanium-Dysprosium nanowires are fabricated by a combined two-step method, which consists of initial arc-melting of the elemental constituents into a pellet and its heat treatment, followed by thermal vapor transport of the powdered pellet in a tube reactor for fabrication of the nanowires. The nanomaterials are fabricated on gold nucleation seeds on Si/SiO2 substrates. The thermodynamic conditions in the reactor are carefully chosen to produce wires with diameters in a narrow, specific range. This nanofabrication method ensures high phase purity and crystallinity of nanowires. Based on the results and theoretical work, it is concluded that the fabricated Ge98Dy2 materials are in a glassy state below 20 K.
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institution Kabale University
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publishDate 2010-01-01
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series Advances in Condensed Matter Physics
spelling doaj-art-7132935d814f4a8cad5088b9bb73442c2025-02-03T05:47:46ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242010-01-01201010.1155/2010/107192107192Growth and Characterization of Ge100-xDyx(x≤2) NanowiresK. B. Paul0G. I. Athanasopoulos1C. C. Doumanidis2C. Rebholz3Hephaistos Nanotechnology Research Center, University of Cyprus, 75 Kallipoleos Avenue, P.O. Box 20537, 1678 Nicosia, CyprusHephaistos Nanotechnology Research Center, University of Cyprus, 75 Kallipoleos Avenue, P.O. Box 20537, 1678 Nicosia, CyprusHephaistos Nanotechnology Research Center, University of Cyprus, 75 Kallipoleos Avenue, P.O. Box 20537, 1678 Nicosia, CyprusHephaistos Nanotechnology Research Center, University of Cyprus, 75 Kallipoleos Avenue, P.O. Box 20537, 1678 Nicosia, CyprusNovel semiconducting Germanium-Dysprosium nanowires are fabricated by a combined two-step method, which consists of initial arc-melting of the elemental constituents into a pellet and its heat treatment, followed by thermal vapor transport of the powdered pellet in a tube reactor for fabrication of the nanowires. The nanomaterials are fabricated on gold nucleation seeds on Si/SiO2 substrates. The thermodynamic conditions in the reactor are carefully chosen to produce wires with diameters in a narrow, specific range. This nanofabrication method ensures high phase purity and crystallinity of nanowires. Based on the results and theoretical work, it is concluded that the fabricated Ge98Dy2 materials are in a glassy state below 20 K.http://dx.doi.org/10.1155/2010/107192
spellingShingle K. B. Paul
G. I. Athanasopoulos
C. C. Doumanidis
C. Rebholz
Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
Advances in Condensed Matter Physics
title Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
title_full Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
title_fullStr Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
title_full_unstemmed Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
title_short Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
title_sort growth and characterization of ge100 xdyx x≤2 nanowires
url http://dx.doi.org/10.1155/2010/107192
work_keys_str_mv AT kbpaul growthandcharacterizationofge100xdyxx2nanowires
AT giathanasopoulos growthandcharacterizationofge100xdyxx2nanowires
AT ccdoumanidis growthandcharacterizationofge100xdyxx2nanowires
AT crebholz growthandcharacterizationofge100xdyxx2nanowires