Growth and Characterization of Ge100-xDyx(x≤2) Nanowires

Novel semiconducting Germanium-Dysprosium nanowires are fabricated by a combined two-step method, which consists of initial arc-melting of the elemental constituents into a pellet and its heat treatment, followed by thermal vapor transport of the powdered pellet in a tube reactor for fabrication of...

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Bibliographic Details
Main Authors: K. B. Paul, G. I. Athanasopoulos, C. C. Doumanidis, C. Rebholz
Format: Article
Language:English
Published: Wiley 2010-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2010/107192
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Summary:Novel semiconducting Germanium-Dysprosium nanowires are fabricated by a combined two-step method, which consists of initial arc-melting of the elemental constituents into a pellet and its heat treatment, followed by thermal vapor transport of the powdered pellet in a tube reactor for fabrication of the nanowires. The nanomaterials are fabricated on gold nucleation seeds on Si/SiO2 substrates. The thermodynamic conditions in the reactor are carefully chosen to produce wires with diameters in a narrow, specific range. This nanofabrication method ensures high phase purity and crystallinity of nanowires. Based on the results and theoretical work, it is concluded that the fabricated Ge98Dy2 materials are in a glassy state below 20 K.
ISSN:1687-8108
1687-8124