Modification of the Ni-NiO-oxidant system by thermo-chemical oxidation with accelerated growth of the p-type dielectric oxide layer, by the action of substituted V2O5 on the system
Nickel is covered with very thin oxide film and is stable against corrosion under normal conditions. Nickel, as Ni-NiO-oxidant system, can make much thicker (even a thousand times) and more corrosion unstable oxides. With certain new oxidation process parameters, nickel can undergo so-called acceler...
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| Format: | Article |
| Language: | English |
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International Institute for the Science of Sintering, Beograd
2024-01-01
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| Series: | Science of Sintering |
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| Online Access: | https://doiserbia.nb.rs/img/doi/0350-820X/2024/0350-820X2300049P.pdf |
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| author | Purenović Jelena M. Purenović Milovan M. |
| author_facet | Purenović Jelena M. Purenović Milovan M. |
| author_sort | Purenović Jelena M. |
| collection | DOAJ |
| description | Nickel is covered with very thin oxide film and is stable against corrosion under normal conditions. Nickel, as Ni-NiO-oxidant system, can make much thicker (even a thousand times) and more corrosion unstable oxides. With certain new oxidation process parameters, nickel can undergo so-called accelerated oxidation. The subject and goal of this work is to find the most favorable conditions for performing of accelerated - catastrophic Ni oxidation process, when substitution of V2O5 is carried out into NiO (2V●•• (Ni)), with significant electron concentration increase and oxygen surplus. Unlimited main and secondary charge carriers transfer is significantly facilitated if oxide film with non-stoichiometric composition and defects is formed. The aim is to avoid compact oxide film formation by chemical-thermal treatments and to obtain porous and defective NiO. By using oxidized system Ni - NiO - oxidant in glass, ceramics and evaporated metal technology, extraordinary usable value of this work is ensured. |
| format | Article |
| id | doaj-art-6f9a9cc7cc354209b048bf20de9bc42f |
| institution | Kabale University |
| issn | 0350-820X 1820-7413 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | International Institute for the Science of Sintering, Beograd |
| record_format | Article |
| series | Science of Sintering |
| spelling | doaj-art-6f9a9cc7cc354209b048bf20de9bc42f2024-11-15T10:49:05ZengInternational Institute for the Science of Sintering, BeogradScience of Sintering0350-820X1820-74132024-01-0156223124510.2298/SOS230726049P0350-820X2300049PModification of the Ni-NiO-oxidant system by thermo-chemical oxidation with accelerated growth of the p-type dielectric oxide layer, by the action of substituted V2O5 on the systemPurenović Jelena M.0https://orcid.org/0000-0002-7181-7400Purenović Milovan M.1University of Kragujevac, Faculty of Technical Sciences Čačak, SerbiaUniversity of Niš, Faculty of Sciences and Mathematics, Serbian Academy of Inventors and Scientists, SerbiaNickel is covered with very thin oxide film and is stable against corrosion under normal conditions. Nickel, as Ni-NiO-oxidant system, can make much thicker (even a thousand times) and more corrosion unstable oxides. With certain new oxidation process parameters, nickel can undergo so-called accelerated oxidation. The subject and goal of this work is to find the most favorable conditions for performing of accelerated - catastrophic Ni oxidation process, when substitution of V2O5 is carried out into NiO (2V●•• (Ni)), with significant electron concentration increase and oxygen surplus. Unlimited main and secondary charge carriers transfer is significantly facilitated if oxide film with non-stoichiometric composition and defects is formed. The aim is to avoid compact oxide film formation by chemical-thermal treatments and to obtain porous and defective NiO. By using oxidized system Ni - NiO - oxidant in glass, ceramics and evaporated metal technology, extraordinary usable value of this work is ensured.https://doiserbia.nb.rs/img/doi/0350-820X/2024/0350-820X2300049P.pdfcatastrophic-accelerated oxidationcation vacancy ni□'electron gaps ⊕disordered defectscatalyst v2o5 |
| spellingShingle | Purenović Jelena M. Purenović Milovan M. Modification of the Ni-NiO-oxidant system by thermo-chemical oxidation with accelerated growth of the p-type dielectric oxide layer, by the action of substituted V2O5 on the system Science of Sintering catastrophic-accelerated oxidation cation vacancy ni□' electron gaps ⊕ disordered defects catalyst v2o5 |
| title | Modification of the Ni-NiO-oxidant system by thermo-chemical oxidation with accelerated growth of the p-type dielectric oxide layer, by the action of substituted V2O5 on the system |
| title_full | Modification of the Ni-NiO-oxidant system by thermo-chemical oxidation with accelerated growth of the p-type dielectric oxide layer, by the action of substituted V2O5 on the system |
| title_fullStr | Modification of the Ni-NiO-oxidant system by thermo-chemical oxidation with accelerated growth of the p-type dielectric oxide layer, by the action of substituted V2O5 on the system |
| title_full_unstemmed | Modification of the Ni-NiO-oxidant system by thermo-chemical oxidation with accelerated growth of the p-type dielectric oxide layer, by the action of substituted V2O5 on the system |
| title_short | Modification of the Ni-NiO-oxidant system by thermo-chemical oxidation with accelerated growth of the p-type dielectric oxide layer, by the action of substituted V2O5 on the system |
| title_sort | modification of the ni nio oxidant system by thermo chemical oxidation with accelerated growth of the p type dielectric oxide layer by the action of substituted v2o5 on the system |
| topic | catastrophic-accelerated oxidation cation vacancy ni□' electron gaps ⊕ disordered defects catalyst v2o5 |
| url | https://doiserbia.nb.rs/img/doi/0350-820X/2024/0350-820X2300049P.pdf |
| work_keys_str_mv | AT purenovicjelenam modificationoftheniniooxidantsystembythermochemicaloxidationwithacceleratedgrowthoftheptypedielectricoxidelayerbytheactionofsubstitutedv2o5onthesystem AT purenovicmilovanm modificationoftheniniooxidantsystembythermochemicaloxidationwithacceleratedgrowthoftheptypedielectricoxidelayerbytheactionofsubstitutedv2o5onthesystem |