Ferroelectric Transistor-Based Synaptic Crossbar Arrays: The Impact of Ferroelectric Thickness and Device-Circuit Interactions
Ferroelectric transistors (FeFETs)-based crossbar arrays have shown immense promise for computing-in-memory (CiM) architectures targeted for neural accelerator designs. Offering CMOS compatibility, nonvolatility, compact bit cell, and CiM-amenable features, such as multilevel storage and voltage-dri...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10756727/ |
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