Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy

Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy

This study investigates the growth of gallium arsenide nanowires, using lead as a catalyst. Typically, nanowires are grown through the vapor–solid–liquid mechanism, where a key factor is the reduction in the nucleation barrier beneath the catalyst droplet. Arsenic exhibits limited solubility in conv...

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Bibliographic Details
Main Authors: Igor V. Shtrom, Nickolai V. Sibirev, Ilya P. Soshnikov, Igor V. Ilkiv, Evgenii V. Ubyivovk, Rodion R. Reznik, George E. Cirlin
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Nanomaterials
Subjects:
semiconductor nanowires
vapor–liquid–solid growth
catalyst
doping
growth modeling
structural characterization
Online Access:https://www.mdpi.com/2079-4991/14/23/1860
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