Epitaxy and transport properties of alkali-earth palladate thin films
Topological insulators and semimetals are an interesting class of materials for new electronic and optical applications owing to their characteristic electromagnetic responses originating from the spin-orbit coupled band structures. However, topological electronic structures are rare in oxide materi...
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Taylor & Francis Group
2023-12-01
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| Series: | Science and Technology of Advanced Materials |
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| Online Access: | https://www.tandfonline.com/doi/10.1080/14686996.2023.2265431 |
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| author | Yusuke Kozuka Taisuke T. Sasaki Terumasa Tadano Jun Fujioka |
| author_facet | Yusuke Kozuka Taisuke T. Sasaki Terumasa Tadano Jun Fujioka |
| author_sort | Yusuke Kozuka |
| collection | DOAJ |
| description | Topological insulators and semimetals are an interesting class of materials for new electronic and optical applications owing to their characteristic electromagnetic responses originating from the spin-orbit coupled band structures. However, topological electronic structures are rare in oxide materials despite their chemical stability being preferable for applications. In this study, given the theoretical prediction of Dirac bands in CaPd3O4, we investigate the fabrication and transport properties of SrPd3O4 and CaPd3O4 thin films as candidates of oxide Dirac semimetals. We have found that these materials are epitaxially grown on MgO (100) substrate under limited growth conditions by pulsed laser deposition. The transport properties show a weak temperature dependence, suggestive of narrow-gap properties, although unintentionally doped holes hinder us from revealing the presence of the Dirac band. Our study establishes the basic thermodynamics of thin-film fabrication of these materials and will lead to interesting properties characteristic of topological band structure by modulating the electronic structure by, for example, chemical substitutions or pressure. |
| format | Article |
| id | doaj-art-6c7a370fffb6404fa9a18b9fbd0fb5f5 |
| institution | Kabale University |
| issn | 1468-6996 1878-5514 |
| language | English |
| publishDate | 2023-12-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials |
| spelling | doaj-art-6c7a370fffb6404fa9a18b9fbd0fb5f52025-08-20T03:40:40ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142023-12-0124110.1080/14686996.2023.2265431Epitaxy and transport properties of alkali-earth palladate thin filmsYusuke Kozuka0Taisuke T. Sasaki1Terumasa Tadano2Jun Fujioka3Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Tsukuba, JapanResearch Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, JapanResearch Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, JapanDepartment of Material Science, University of Tsukuba, Tsukuba, JapanTopological insulators and semimetals are an interesting class of materials for new electronic and optical applications owing to their characteristic electromagnetic responses originating from the spin-orbit coupled band structures. However, topological electronic structures are rare in oxide materials despite their chemical stability being preferable for applications. In this study, given the theoretical prediction of Dirac bands in CaPd3O4, we investigate the fabrication and transport properties of SrPd3O4 and CaPd3O4 thin films as candidates of oxide Dirac semimetals. We have found that these materials are epitaxially grown on MgO (100) substrate under limited growth conditions by pulsed laser deposition. The transport properties show a weak temperature dependence, suggestive of narrow-gap properties, although unintentionally doped holes hinder us from revealing the presence of the Dirac band. Our study establishes the basic thermodynamics of thin-film fabrication of these materials and will lead to interesting properties characteristic of topological band structure by modulating the electronic structure by, for example, chemical substitutions or pressure.https://www.tandfonline.com/doi/10.1080/14686996.2023.2265431Palladatethin filmtransmission electron microscopyfirst-principles calculationtransport properties |
| spellingShingle | Yusuke Kozuka Taisuke T. Sasaki Terumasa Tadano Jun Fujioka Epitaxy and transport properties of alkali-earth palladate thin films Science and Technology of Advanced Materials Palladate thin film transmission electron microscopy first-principles calculation transport properties |
| title | Epitaxy and transport properties of alkali-earth palladate thin films |
| title_full | Epitaxy and transport properties of alkali-earth palladate thin films |
| title_fullStr | Epitaxy and transport properties of alkali-earth palladate thin films |
| title_full_unstemmed | Epitaxy and transport properties of alkali-earth palladate thin films |
| title_short | Epitaxy and transport properties of alkali-earth palladate thin films |
| title_sort | epitaxy and transport properties of alkali earth palladate thin films |
| topic | Palladate thin film transmission electron microscopy first-principles calculation transport properties |
| url | https://www.tandfonline.com/doi/10.1080/14686996.2023.2265431 |
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