Energy yield framework to simulate thin film CIGS solar cells and analyze limitations of the technology
Abstract This study presents a comprehensive evaluation of Copper Indium Gallium Selenide (CIGS) solar technology, benchmarked against crystalline silicon (c-Si) PERC PV technology. Utilizing a newly developed energy yield model, we analyzed the performance of CIGS in various environmental scenarios...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-78862-w |
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| Summary: | Abstract This study presents a comprehensive evaluation of Copper Indium Gallium Selenide (CIGS) solar technology, benchmarked against crystalline silicon (c-Si) PERC PV technology. Utilizing a newly developed energy yield model, we analyzed the performance of CIGS in various environmental scenarios, emphasizing its behavior in low-light conditions and under different temperature regimes. The model demonstrated high accuracy with improved error metrics of normalized mean bias error (nMBE) ~ 1% and normalized root mean square error (nRMSE) of ~ 8%–20% in simulating rack mounted setup and integrated PV systems. Key findings reveal that the CIGS technology, while slightly underperforming in integrated, low-irradiance setups, shows comparable or superior performance to c-Si PERC technology in high-irradiance and high-temperature conditions. A significant focus of the study was on the low-light performance of CIGS, where it exhibited notable voltage losses. Our research highlights the importance of reducing the diode ideality factor for enhancing CIGS power conversion efficiency, particularly In low-light conditions. These insights provide a pathway for future research and technological improvements, emphasizing defect engineering, passivation strategies to advance the understanding and application of the CIGS technology. |
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| ISSN: | 2045-2322 |