Enhancing the efficiency of hybrid Schottky diode by decoration of 2D Cs:ZnO nanosheets with CNTs via a facile co-precipitation approach

The Cs:ZnO@CNTs nanocomposite was synthesized by chemical co-precipitation method and characterized using XRD, EDX, SEM, and TEM techniques, which revealed small crystalline size, high atomic density, and large surface area. The thin films showed intense optical absorption near the visible region wi...

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Main Authors: A Al-Sayed, Miad Ali Siddiq, Elsayed Elgazzar
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/ada268
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author A Al-Sayed
Miad Ali Siddiq
Elsayed Elgazzar
author_facet A Al-Sayed
Miad Ali Siddiq
Elsayed Elgazzar
author_sort A Al-Sayed
collection DOAJ
description The Cs:ZnO@CNTs nanocomposite was synthesized by chemical co-precipitation method and characterized using XRD, EDX, SEM, and TEM techniques, which revealed small crystalline size, high atomic density, and large surface area. The thin films showed intense optical absorption near the visible region with optical band gaps of 3.12 eV and 3.06 eV for Cs:ZnO and Cs:ZnO@CNTs nanostructures, respectively. The hybrid Schottky diode was fabricated by depositing Cs:ZnO nanosheets on p-Si using drop casting technique and the metal contacts were thermally deposited via thermal evaporation technique. The electronic parameters were evaluated in a dark environment, revealing reduced series resistance ${({\rm{R}}}_{{\rm{s}}})$ and a decreased potential barrier ${(\phi }_{{\rm{b}})}$ relative to the undoped diode. The photodiode demonstrated elevated responsivity and specific detectivity under illumination conditions influenced by CNT additions, which expanded optical absorption and increased photocarrier density. The ${\rm{C}}/{\rm{G}}-{\rm{V}}$ and ${{\rm{R}}}_{{\rm{s}}}-{\rm{V}}$ measurements were executed over a wide frequency range, indicating the significant impact of trapped centers at interfacial layers on capacitance, conductance, and series resistance characteristics. The obtained results confirmed the potential use of hybrid photoactive materials in the development of solar power devices.
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spelling doaj-art-6a6a22f22e83401db00b52f8d2f778b22025-01-07T15:46:58ZengIOP PublishingMaterials Research Express2053-15912025-01-0112101500210.1088/2053-1591/ada268Enhancing the efficiency of hybrid Schottky diode by decoration of 2D Cs:ZnO nanosheets with CNTs via a facile co-precipitation approachA Al-Sayed0https://orcid.org/0000-0003-1149-781XMiad Ali Siddiq1https://orcid.org/0000-0002-4032-5462Elsayed Elgazzar2https://orcid.org/0000-0002-7220-9503Department of Physics, College of Science, Qassim University , Saudi ArabiaDepartment of Physical Science, College of Science, Jazan University , Jazan 45142, Saudi ArabiaDepartment of Physics, Faculty of Science, Suez Canal University , Ismailia 41522, EgyptThe Cs:ZnO@CNTs nanocomposite was synthesized by chemical co-precipitation method and characterized using XRD, EDX, SEM, and TEM techniques, which revealed small crystalline size, high atomic density, and large surface area. The thin films showed intense optical absorption near the visible region with optical band gaps of 3.12 eV and 3.06 eV for Cs:ZnO and Cs:ZnO@CNTs nanostructures, respectively. The hybrid Schottky diode was fabricated by depositing Cs:ZnO nanosheets on p-Si using drop casting technique and the metal contacts were thermally deposited via thermal evaporation technique. The electronic parameters were evaluated in a dark environment, revealing reduced series resistance ${({\rm{R}}}_{{\rm{s}}})$ and a decreased potential barrier ${(\phi }_{{\rm{b}})}$ relative to the undoped diode. The photodiode demonstrated elevated responsivity and specific detectivity under illumination conditions influenced by CNT additions, which expanded optical absorption and increased photocarrier density. The ${\rm{C}}/{\rm{G}}-{\rm{V}}$ and ${{\rm{R}}}_{{\rm{s}}}-{\rm{V}}$ measurements were executed over a wide frequency range, indicating the significant impact of trapped centers at interfacial layers on capacitance, conductance, and series resistance characteristics. The obtained results confirmed the potential use of hybrid photoactive materials in the development of solar power devices.https://doi.org/10.1088/2053-1591/ada268energy gapsolar powerSchottky diodeCs:ZnO@CNTsnanohybridexternal quantum efficiency
spellingShingle A Al-Sayed
Miad Ali Siddiq
Elsayed Elgazzar
Enhancing the efficiency of hybrid Schottky diode by decoration of 2D Cs:ZnO nanosheets with CNTs via a facile co-precipitation approach
Materials Research Express
energy gap
solar power
Schottky diode
Cs:ZnO@CNTs
nanohybrid
external quantum efficiency
title Enhancing the efficiency of hybrid Schottky diode by decoration of 2D Cs:ZnO nanosheets with CNTs via a facile co-precipitation approach
title_full Enhancing the efficiency of hybrid Schottky diode by decoration of 2D Cs:ZnO nanosheets with CNTs via a facile co-precipitation approach
title_fullStr Enhancing the efficiency of hybrid Schottky diode by decoration of 2D Cs:ZnO nanosheets with CNTs via a facile co-precipitation approach
title_full_unstemmed Enhancing the efficiency of hybrid Schottky diode by decoration of 2D Cs:ZnO nanosheets with CNTs via a facile co-precipitation approach
title_short Enhancing the efficiency of hybrid Schottky diode by decoration of 2D Cs:ZnO nanosheets with CNTs via a facile co-precipitation approach
title_sort enhancing the efficiency of hybrid schottky diode by decoration of 2d cs zno nanosheets with cnts via a facile co precipitation approach
topic energy gap
solar power
Schottky diode
Cs:ZnO@CNTs
nanohybrid
external quantum efficiency
url https://doi.org/10.1088/2053-1591/ada268
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