Optimizing solar performance of CFTSe-based solar cells using MoSe2 as an innovative buffer layers
Abstract In this study, we explore the photovoltaic performance of an innovative high efficiency heterostructure utilizing the quaternary semiconductor Cu2FeSnSe4 (CFTSe). This material features a kesterite symmetrical structure and is distinguished by its non-toxic nature and abundant presence in t...
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Nature Portfolio
2025-01-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-024-82309-7 |
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| author | Mohamed Moustafa Ziad Abu Waar Shadi Yasin |
| author_facet | Mohamed Moustafa Ziad Abu Waar Shadi Yasin |
| author_sort | Mohamed Moustafa |
| collection | DOAJ |
| description | Abstract In this study, we explore the photovoltaic performance of an innovative high efficiency heterostructure utilizing the quaternary semiconductor Cu2FeSnSe4 (CFTSe). This material features a kesterite symmetrical structure and is distinguished by its non-toxic nature and abundant presence in the earth’s crust. Utilizing the SCAPS simulator, we explore various electrical specifications such as short circuit current (Jsc), open circuit voltage (Voc), the fill factor (FF), and power conversion efficiency (PCE) were explored at a large range of thicknesses, and the acceptor carrier concentration doping (NA). Our results demonstrate that optimized parameters yield a remarkable PCE of 26.47%, accompanied by a Voc of 1.194 V, Jsc of 35.37 mA/cm2, and FF of 62.65% at a CFTSe absorber thickness of 0.5 μm. Furthermore, the performance of the photovoltaic cell is assessed for the defect levels in the CFTSe absorber and MoSe2 buffer layers. Results indicate that deep defect levels above 1 × 1017 cm− 3 lead to a decrease in Jsc. The study also investigates the effect of operating temperature on cell performance within the 300–500 K range. A notable decline in Voc is observed, likely due to an increase in saturation current, suggesting an interaction between temperature and cell behavior. In this work, we propose a practical CFTSe-based structure that replaces conventional buffer layers, such as CdS, with MoSe2 TMDC as a promising alternative buffer layer, paving the way for more sustainable solar technology. |
| format | Article |
| id | doaj-art-68a2cc7f711642f895f812dfb5cba8e2 |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
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| spelling | doaj-art-68a2cc7f711642f895f812dfb5cba8e22025-01-05T12:14:40ZengNature PortfolioScientific Reports2045-23222025-01-0115111510.1038/s41598-024-82309-7Optimizing solar performance of CFTSe-based solar cells using MoSe2 as an innovative buffer layersMohamed Moustafa0Ziad Abu Waar1Shadi Yasin2Department of Physics, School of Sciences and Engineering, The American University in CairoDepartment of Physics, College of Science, The University of JordanCollege of Integrative Studies, Abdullah Al Salem UniversityAbstract In this study, we explore the photovoltaic performance of an innovative high efficiency heterostructure utilizing the quaternary semiconductor Cu2FeSnSe4 (CFTSe). This material features a kesterite symmetrical structure and is distinguished by its non-toxic nature and abundant presence in the earth’s crust. Utilizing the SCAPS simulator, we explore various electrical specifications such as short circuit current (Jsc), open circuit voltage (Voc), the fill factor (FF), and power conversion efficiency (PCE) were explored at a large range of thicknesses, and the acceptor carrier concentration doping (NA). Our results demonstrate that optimized parameters yield a remarkable PCE of 26.47%, accompanied by a Voc of 1.194 V, Jsc of 35.37 mA/cm2, and FF of 62.65% at a CFTSe absorber thickness of 0.5 μm. Furthermore, the performance of the photovoltaic cell is assessed for the defect levels in the CFTSe absorber and MoSe2 buffer layers. Results indicate that deep defect levels above 1 × 1017 cm− 3 lead to a decrease in Jsc. The study also investigates the effect of operating temperature on cell performance within the 300–500 K range. A notable decline in Voc is observed, likely due to an increase in saturation current, suggesting an interaction between temperature and cell behavior. In this work, we propose a practical CFTSe-based structure that replaces conventional buffer layers, such as CdS, with MoSe2 TMDC as a promising alternative buffer layer, paving the way for more sustainable solar technology.https://doi.org/10.1038/s41598-024-82309-7SCAPS simulationCFTSeTMDCsBuffer layerMoSe2Thin film solar cell |
| spellingShingle | Mohamed Moustafa Ziad Abu Waar Shadi Yasin Optimizing solar performance of CFTSe-based solar cells using MoSe2 as an innovative buffer layers Scientific Reports SCAPS simulation CFTSe TMDCs Buffer layer MoSe2 Thin film solar cell |
| title | Optimizing solar performance of CFTSe-based solar cells using MoSe2 as an innovative buffer layers |
| title_full | Optimizing solar performance of CFTSe-based solar cells using MoSe2 as an innovative buffer layers |
| title_fullStr | Optimizing solar performance of CFTSe-based solar cells using MoSe2 as an innovative buffer layers |
| title_full_unstemmed | Optimizing solar performance of CFTSe-based solar cells using MoSe2 as an innovative buffer layers |
| title_short | Optimizing solar performance of CFTSe-based solar cells using MoSe2 as an innovative buffer layers |
| title_sort | optimizing solar performance of cftse based solar cells using mose2 as an innovative buffer layers |
| topic | SCAPS simulation CFTSe TMDCs Buffer layer MoSe2 Thin film solar cell |
| url | https://doi.org/10.1038/s41598-024-82309-7 |
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