Ferroelectric capacitive memories: devices, arrays, and applications
Abstract Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate device capacitance for data storage, providing a new technological pathway to achieve two-terminal non-destructive-read ferroelectric memory. In contrast to the conventional resistive memories, the uniqu...
Saved in:
Main Authors: | Zuopu Zhou, Leming Jiao, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Qiwen Kong, Chen Sun, Jiawei Xie, Xiao Gong |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2025-01-01
|
Series: | Nano Convergence |
Subjects: | |
Online Access: | https://doi.org/10.1186/s40580-024-00463-0 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Ferroelectric Transistor-Based Synaptic Crossbar Arrays: The Impact of Ferroelectric Thickness and Device-Circuit Interactions
by: Chunguang Wang, et al.
Published: (2024-01-01) -
Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection
by: Musaib Rafiq, et al.
Published: (2024-01-01) -
Superior energy-storage density and ultrahigh efficiency in KNN-based ferroelectric ceramics via high-entropy design
by: Yu Huan, et al.
Published: (2025-01-01) -
The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET
by: Junghyeon Hwang, et al.
Published: (2024-01-01) -
Advanced ferroelectric oxide films and heterostructures for unconventional applications
by: Sisi Huang, et al.
Published: (2025-12-01)