Achieving a large field-induced polarization and energy density in BaTiO3 films sputter-deposited on Si at 200 °C via a buffer-layer technique
Ferroelectric oxide films with a large field-induced polarization can be used in dielectric capacitors for charge or energy storage in microelectronic systems and hence have attracted intense research interest. A high processing temperature is usually required to produce a well-crystallized polar ph...
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Tsinghua University Press
2025-03-01
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| Series: | Journal of Advanced Ceramics |
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| Online Access: | https://www.sciopen.com/article/10.26599/JAC.2025.9221038 |
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| author | Chao Liu Jun Ouyang Yuyao Zhao Hanfei Zhu Hongbu Cheng Zhenyan Liang Li Wang |
| author_facet | Chao Liu Jun Ouyang Yuyao Zhao Hanfei Zhu Hongbu Cheng Zhenyan Liang Li Wang |
| author_sort | Chao Liu |
| collection | DOAJ |
| description | Ferroelectric oxide films with a large field-induced polarization can be used in dielectric capacitors for charge or energy storage in microelectronic systems and hence have attracted intense research interest. A high processing temperature is usually required to produce a well-crystallized polar phase and hence a large polarization in the film, corresponding to a high charge or energy density. However, high processing temperature not only reduces the charge‒discharge efficiency by producing a sizable remnant polarization but is also incompatible with the integration process. In this study, we address this problem by creating a large field-induced polarization (~55.8 μC/cm2) in BaTiO3 films sputter-deposited on Si at 200 °C via a buffer-layer technique. This large polarization led to a high energy density and efficiency (Wrec ≈ 94.7 J/cm3, η ≈ 78.2%@4 MV/cm). The thickness of LaNiO3 buffer layer was revealed to be the key factor determining the electric polarization (remnant and field-induced ones). A 50 nm LaNiO3 thickness, corresponding to the aforementioned polarization and energy storage performance, not only ensures proper crystallization in the BaTiO3 film, but also leads to an optimal combination of polycrystalline grains with a high dielectric constant. The latter accounts for the majority of the field-induced polarization. Our results revealed the key role of a buffer layer in tuning the microstructure of a low-temperature deposited ferroelectric oxide film. Furthermore, the excellent charge/energy storage performance of these 200 °C-deposited BaTiO3 films has provided many opportunities for this simple dielectric in microelectronics. |
| format | Article |
| id | doaj-art-66481cc8a9dc4d5e89fec0f3c47bbfc5 |
| institution | Kabale University |
| issn | 2226-4108 2227-8508 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Tsinghua University Press |
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| series | Journal of Advanced Ceramics |
| spelling | doaj-art-66481cc8a9dc4d5e89fec0f3c47bbfc52025-08-20T03:49:07ZengTsinghua University PressJournal of Advanced Ceramics2226-41082227-85082025-03-01143922103810.26599/JAC.2025.9221038Achieving a large field-induced polarization and energy density in BaTiO3 films sputter-deposited on Si at 200 °C via a buffer-layer techniqueChao Liu0Jun Ouyang1Yuyao Zhao2Hanfei Zhu3Hongbu Cheng4Zhenyan Liang5Li Wang6Institute of Advanced Energy Materials and Chemistry, Jinan Engineering Laboratory for Multi-scale Functional Materials, Shandong Provincial Key Laboratory of Molecular Engineering, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, ChinaInstitute of Advanced Energy Materials and Chemistry, Jinan Engineering Laboratory for Multi-scale Functional Materials, Shandong Provincial Key Laboratory of Molecular Engineering, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, ChinaKey Laboratory for Liquid–Solid Structure Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan 250061, ChinaInstitute of Advanced Energy Materials and Chemistry, Jinan Engineering Laboratory for Multi-scale Functional Materials, Shandong Provincial Key Laboratory of Molecular Engineering, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, ChinaInstitute of Advanced Energy Materials and Chemistry, Jinan Engineering Laboratory for Multi-scale Functional Materials, Shandong Provincial Key Laboratory of Molecular Engineering, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, ChinaInstitute of Advanced Energy Materials and Chemistry, Jinan Engineering Laboratory for Multi-scale Functional Materials, Shandong Provincial Key Laboratory of Molecular Engineering, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, ChinaInstitute of Advanced Energy Materials and Chemistry, Jinan Engineering Laboratory for Multi-scale Functional Materials, Shandong Provincial Key Laboratory of Molecular Engineering, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, ChinaFerroelectric oxide films with a large field-induced polarization can be used in dielectric capacitors for charge or energy storage in microelectronic systems and hence have attracted intense research interest. A high processing temperature is usually required to produce a well-crystallized polar phase and hence a large polarization in the film, corresponding to a high charge or energy density. However, high processing temperature not only reduces the charge‒discharge efficiency by producing a sizable remnant polarization but is also incompatible with the integration process. In this study, we address this problem by creating a large field-induced polarization (~55.8 μC/cm2) in BaTiO3 films sputter-deposited on Si at 200 °C via a buffer-layer technique. This large polarization led to a high energy density and efficiency (Wrec ≈ 94.7 J/cm3, η ≈ 78.2%@4 MV/cm). The thickness of LaNiO3 buffer layer was revealed to be the key factor determining the electric polarization (remnant and field-induced ones). A 50 nm LaNiO3 thickness, corresponding to the aforementioned polarization and energy storage performance, not only ensures proper crystallization in the BaTiO3 film, but also leads to an optimal combination of polycrystalline grains with a high dielectric constant. The latter accounts for the majority of the field-induced polarization. Our results revealed the key role of a buffer layer in tuning the microstructure of a low-temperature deposited ferroelectric oxide film. Furthermore, the excellent charge/energy storage performance of these 200 °C-deposited BaTiO3 films has provided many opportunities for this simple dielectric in microelectronics.https://www.sciopen.com/article/10.26599/JAC.2025.9221038ferroelectric oxide filmsfield-induced polarizationbatio3lanio3energy density |
| spellingShingle | Chao Liu Jun Ouyang Yuyao Zhao Hanfei Zhu Hongbu Cheng Zhenyan Liang Li Wang Achieving a large field-induced polarization and energy density in BaTiO3 films sputter-deposited on Si at 200 °C via a buffer-layer technique Journal of Advanced Ceramics ferroelectric oxide films field-induced polarization batio3 lanio3 energy density |
| title | Achieving a large field-induced polarization and energy density in BaTiO3 films sputter-deposited on Si at 200 °C via a buffer-layer technique |
| title_full | Achieving a large field-induced polarization and energy density in BaTiO3 films sputter-deposited on Si at 200 °C via a buffer-layer technique |
| title_fullStr | Achieving a large field-induced polarization and energy density in BaTiO3 films sputter-deposited on Si at 200 °C via a buffer-layer technique |
| title_full_unstemmed | Achieving a large field-induced polarization and energy density in BaTiO3 films sputter-deposited on Si at 200 °C via a buffer-layer technique |
| title_short | Achieving a large field-induced polarization and energy density in BaTiO3 films sputter-deposited on Si at 200 °C via a buffer-layer technique |
| title_sort | achieving a large field induced polarization and energy density in batio3 films sputter deposited on si at 200 °c via a buffer layer technique |
| topic | ferroelectric oxide films field-induced polarization batio3 lanio3 energy density |
| url | https://www.sciopen.com/article/10.26599/JAC.2025.9221038 |
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