Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors
Semiconductor p‐n homojunction is a requisite building block of operating transistors and diodes which make up the modern electronic circuits and optoelectronic applications. However, it has been so far limited to bulk form of single crystals such as silicon (Si) or gallium arsenide. Herein, a brand...
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| Format: | Article |
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Wiley-VCH
2024-12-01
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| Series: | Small Science |
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| Online Access: | https://doi.org/10.1002/smsc.202400367 |
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| author | Batu Ghosh Hiroyuki Yamada Kazuhiro Nemoto Wipakorn Jevasuwan Naoki Fukata Hon‐Tao Sun Naoto Shirahata |
| author_facet | Batu Ghosh Hiroyuki Yamada Kazuhiro Nemoto Wipakorn Jevasuwan Naoki Fukata Hon‐Tao Sun Naoto Shirahata |
| author_sort | Batu Ghosh |
| collection | DOAJ |
| description | Semiconductor p‐n homojunction is a requisite building block of operating transistors and diodes which make up the modern electronic circuits and optoelectronic applications. However, it has been so far limited to bulk form of single crystals such as silicon (Si) or gallium arsenide. Herein, a brand‐new method of constructing p‐n homojunction architectures that breaks through the limitation is presented. Colloidal inks of p‐type and n‐type Si quantum dots (QDs) are synthesized by thermal disproportionation of (HSiO1.5)n doped with boron or phosphorus, followed by surface ligand engineering. Analysis combining UV photoelectron spectroscopy, electron spin resonance, and current–voltage characteristics confirms that an orthogonal solvent trick makes clean interfaces between n‐type and p‐type SiQD layers without disruption on film formation. The forward and reverse current–voltage characteristics of the diode, along with various spectroscopic characterizations, demonstrate the formation of the first p‐n homojunction of SiQDs. The self‐powered photodiode provides a tunable response specific to the wavelength. |
| format | Article |
| id | doaj-art-6614446d7a4c4d02a8c14a038d24f58d |
| institution | Kabale University |
| issn | 2688-4046 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Science |
| spelling | doaj-art-6614446d7a4c4d02a8c14a038d24f58d2024-12-01T13:34:05ZengWiley-VCHSmall Science2688-40462024-12-01412n/an/a10.1002/smsc.202400367Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot PhotodetectorsBatu Ghosh0Hiroyuki Yamada1Kazuhiro Nemoto2Wipakorn Jevasuwan3Naoki Fukata4Hon‐Tao Sun5Naoto Shirahata6Research Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanResearch Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanResearch Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanResearch Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanResearch Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanResearch Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanResearch Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 JapanSemiconductor p‐n homojunction is a requisite building block of operating transistors and diodes which make up the modern electronic circuits and optoelectronic applications. However, it has been so far limited to bulk form of single crystals such as silicon (Si) or gallium arsenide. Herein, a brand‐new method of constructing p‐n homojunction architectures that breaks through the limitation is presented. Colloidal inks of p‐type and n‐type Si quantum dots (QDs) are synthesized by thermal disproportionation of (HSiO1.5)n doped with boron or phosphorus, followed by surface ligand engineering. Analysis combining UV photoelectron spectroscopy, electron spin resonance, and current–voltage characteristics confirms that an orthogonal solvent trick makes clean interfaces between n‐type and p‐type SiQD layers without disruption on film formation. The forward and reverse current–voltage characteristics of the diode, along with various spectroscopic characterizations, demonstrate the formation of the first p‐n homojunction of SiQDs. The self‐powered photodiode provides a tunable response specific to the wavelength.https://doi.org/10.1002/smsc.202400367electric impurity dopingp‐n homojunctionphotodiodessilicon quantum dotssolution‐processed optoelectronics |
| spellingShingle | Batu Ghosh Hiroyuki Yamada Kazuhiro Nemoto Wipakorn Jevasuwan Naoki Fukata Hon‐Tao Sun Naoto Shirahata Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors Small Science electric impurity doping p‐n homojunction photodiodes silicon quantum dots solution‐processed optoelectronics |
| title | Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors |
| title_full | Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors |
| title_fullStr | Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors |
| title_full_unstemmed | Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors |
| title_short | Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors |
| title_sort | rational doping strategy to build the first solution processed p n homojunction architecture toward silicon quantum dot photodetectors |
| topic | electric impurity doping p‐n homojunction photodiodes silicon quantum dots solution‐processed optoelectronics |
| url | https://doi.org/10.1002/smsc.202400367 |
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