Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer

Abstract The recently emerged remote epitaxy technique, utilizing 2D materials (mostly graphene) as interlayers between the epilayer and the substrate, enables the exfoliation of crystalline nanomembranes from the substrate, expanding the range of potential device applications. However, remote epita...

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Main Authors: Chang Liu, Xing Li, Yang Wang, Zhi Zheng, Binmin Wu, Wenhao He, Xiang Dong, Ziyu Zhang, Bingxin Chen, Jiayuan Huang, Zhenghua An, Changlin Zheng, Gaoshan Huang, Yongfeng Mei
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-024-55402-8
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author Chang Liu
Xing Li
Yang Wang
Zhi Zheng
Binmin Wu
Wenhao He
Xiang Dong
Ziyu Zhang
Bingxin Chen
Jiayuan Huang
Zhenghua An
Changlin Zheng
Gaoshan Huang
Yongfeng Mei
author_facet Chang Liu
Xing Li
Yang Wang
Zhi Zheng
Binmin Wu
Wenhao He
Xiang Dong
Ziyu Zhang
Bingxin Chen
Jiayuan Huang
Zhenghua An
Changlin Zheng
Gaoshan Huang
Yongfeng Mei
author_sort Chang Liu
collection DOAJ
description Abstract The recently emerged remote epitaxy technique, utilizing 2D materials (mostly graphene) as interlayers between the epilayer and the substrate, enables the exfoliation of crystalline nanomembranes from the substrate, expanding the range of potential device applications. However, remote epitaxy has been so far applied to a limited range of material systems, owing to the need of stringent growth conditions to avoid graphene damaging, and has therefore remained challenging for the synthesis of oxide nanomembranes. Here, we demonstrate the remote epitaxial growth of an oxide nanomembrane (vanadium dioxide, VO2) with a sub-nanometer thick amorphous interlayer, which can withstand potential sputtering-induced damage and oxidation. By removing the amorphous interlayer, a 4-inch wafer-scale freestanding VO2 nanomembrane can be obtained, exhibiting intact crystalline structure and physical properties. In addition, multi-shaped freestanding infrared bolometers are fabricated based on the epitaxial VO2 nanomembranes, showing high detectivity and low current noise. Our strategy provides a promising way to explore various freestanding heteroepitaxial oxide materials for future large-scale integrated circuits and functional devices.
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institution Kabale University
issn 2041-1723
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publishDate 2025-01-01
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spelling doaj-art-65dac7d2ab6b432483bdba2d8d5413fd2025-01-05T12:40:23ZengNature PortfolioNature Communications2041-17232025-01-011611910.1038/s41467-024-55402-8Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayerChang Liu0Xing Li1Yang Wang2Zhi Zheng3Binmin Wu4Wenhao He5Xiang Dong6Ziyu Zhang7Bingxin Chen8Jiayuan Huang9Zhenghua An10Changlin Zheng11Gaoshan Huang12Yongfeng Mei13Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan UniversityDepartment of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan UniversityDepartment of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan UniversityDepartment of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan UniversityState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesState Key Laboratory of Surface Physics and Department of Physics, Fudan UniversityDepartment of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan UniversityDepartment of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan UniversityState Key Laboratory of Surface Physics & Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan UniversityDepartment of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan UniversityState Key Laboratory of Surface Physics & Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan UniversityState Key Laboratory of Surface Physics and Department of Physics, Fudan UniversityDepartment of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan UniversityDepartment of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan UniversityAbstract The recently emerged remote epitaxy technique, utilizing 2D materials (mostly graphene) as interlayers between the epilayer and the substrate, enables the exfoliation of crystalline nanomembranes from the substrate, expanding the range of potential device applications. However, remote epitaxy has been so far applied to a limited range of material systems, owing to the need of stringent growth conditions to avoid graphene damaging, and has therefore remained challenging for the synthesis of oxide nanomembranes. Here, we demonstrate the remote epitaxial growth of an oxide nanomembrane (vanadium dioxide, VO2) with a sub-nanometer thick amorphous interlayer, which can withstand potential sputtering-induced damage and oxidation. By removing the amorphous interlayer, a 4-inch wafer-scale freestanding VO2 nanomembrane can be obtained, exhibiting intact crystalline structure and physical properties. In addition, multi-shaped freestanding infrared bolometers are fabricated based on the epitaxial VO2 nanomembranes, showing high detectivity and low current noise. Our strategy provides a promising way to explore various freestanding heteroepitaxial oxide materials for future large-scale integrated circuits and functional devices.https://doi.org/10.1038/s41467-024-55402-8
spellingShingle Chang Liu
Xing Li
Yang Wang
Zhi Zheng
Binmin Wu
Wenhao He
Xiang Dong
Ziyu Zhang
Bingxin Chen
Jiayuan Huang
Zhenghua An
Changlin Zheng
Gaoshan Huang
Yongfeng Mei
Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer
Nature Communications
title Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer
title_full Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer
title_fullStr Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer
title_full_unstemmed Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer
title_short Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer
title_sort remote epitaxy and exfoliation of vanadium dioxide via sub nanometer thick amorphous interlayer
url https://doi.org/10.1038/s41467-024-55402-8
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