Trade-offs encountered in traditional mobility enhancement techniques applied to contact-controlled thin film transistors
Various mobility enhancement strategies are used at the material, process, and design geometry levels, to improve the performance of conventional thin film transistors (TFTs). These include the optimization of contact barrier height, semiconductor carrier concentration, post-annealing, and channel l...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2025-01-01
|
| Series: | Journal of Information Display |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/15980316.2025.2449890 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1841543462602670080 |
|---|---|
| author | Roshna B. Raj Ashutosh Kumar Tripathi Shiny Nair T. Mukundan T. K. Shahana |
| author_facet | Roshna B. Raj Ashutosh Kumar Tripathi Shiny Nair T. Mukundan T. K. Shahana |
| author_sort | Roshna B. Raj |
| collection | DOAJ |
| description | Various mobility enhancement strategies are used at the material, process, and design geometry levels, to improve the performance of conventional thin film transistors (TFTs). These include the optimization of contact barrier height, semiconductor carrier concentration, post-annealing, and channel length optimization. In this study, the effects of these strategies on the performance metrics of contact-controlled amorphous Indium Gallium Zinc oxide (a-IGZO) TFTs are analyzed. Using a low barrier contact metal and a higher channel concentration can enhance the mobility of these TFTs by aiding the high field mode of operation with barrier lowering effect, but this leads to higher values of saturation coefficient, channel length sensitivity, and saturation voltage, with a lower value of output impedance. For a device working in the low-field mode, though the process of annealing improves the mobility characteristics, it deteriorates contact-controlled performance. Channel length upscaling also negatively affects all the contact-controlled performance metrics except output impedance. Thus, this study brings out the deteriorative effect of conventional mobility enhancement strategies on the performance metrics of a contact-controlled device, by unraveling the underlying semiconductor transport physics and the interplay between contact resistance and channel resistance. |
| format | Article |
| id | doaj-art-6243e0be2e164b8b8430239076b750a8 |
| institution | Kabale University |
| issn | 1598-0316 2158-1606 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Journal of Information Display |
| spelling | doaj-art-6243e0be2e164b8b8430239076b750a82025-01-13T10:34:14ZengTaylor & Francis GroupJournal of Information Display1598-03162158-16062025-01-0111710.1080/15980316.2025.2449890Trade-offs encountered in traditional mobility enhancement techniques applied to contact-controlled thin film transistorsRoshna B. Raj0Ashutosh Kumar Tripathi1Shiny Nair2T. Mukundan3T. K. Shahana4School of Engineering, Cochin University of Science and Technology, Kochi, IndiaNational Centre for Flexible Electronics, Indian Institute of Technology Kanpur, Kanpur, IndiaNaval Physical and Oceanographic Laboratory, DRDO, Kochi, IndiaFaculty of Science, Cochin University of Science and Technology, Kochi, IndiaSchool of Engineering, Cochin University of Science and Technology, Kochi, IndiaVarious mobility enhancement strategies are used at the material, process, and design geometry levels, to improve the performance of conventional thin film transistors (TFTs). These include the optimization of contact barrier height, semiconductor carrier concentration, post-annealing, and channel length optimization. In this study, the effects of these strategies on the performance metrics of contact-controlled amorphous Indium Gallium Zinc oxide (a-IGZO) TFTs are analyzed. Using a low barrier contact metal and a higher channel concentration can enhance the mobility of these TFTs by aiding the high field mode of operation with barrier lowering effect, but this leads to higher values of saturation coefficient, channel length sensitivity, and saturation voltage, with a lower value of output impedance. For a device working in the low-field mode, though the process of annealing improves the mobility characteristics, it deteriorates contact-controlled performance. Channel length upscaling also negatively affects all the contact-controlled performance metrics except output impedance. Thus, this study brings out the deteriorative effect of conventional mobility enhancement strategies on the performance metrics of a contact-controlled device, by unraveling the underlying semiconductor transport physics and the interplay between contact resistance and channel resistance.https://www.tandfonline.com/doi/10.1080/15980316.2025.2449890Contact-controlled TFTmobility enhancementsaturation coefficientoutput impedancesaturation voltage |
| spellingShingle | Roshna B. Raj Ashutosh Kumar Tripathi Shiny Nair T. Mukundan T. K. Shahana Trade-offs encountered in traditional mobility enhancement techniques applied to contact-controlled thin film transistors Journal of Information Display Contact-controlled TFT mobility enhancement saturation coefficient output impedance saturation voltage |
| title | Trade-offs encountered in traditional mobility enhancement techniques applied to contact-controlled thin film transistors |
| title_full | Trade-offs encountered in traditional mobility enhancement techniques applied to contact-controlled thin film transistors |
| title_fullStr | Trade-offs encountered in traditional mobility enhancement techniques applied to contact-controlled thin film transistors |
| title_full_unstemmed | Trade-offs encountered in traditional mobility enhancement techniques applied to contact-controlled thin film transistors |
| title_short | Trade-offs encountered in traditional mobility enhancement techniques applied to contact-controlled thin film transistors |
| title_sort | trade offs encountered in traditional mobility enhancement techniques applied to contact controlled thin film transistors |
| topic | Contact-controlled TFT mobility enhancement saturation coefficient output impedance saturation voltage |
| url | https://www.tandfonline.com/doi/10.1080/15980316.2025.2449890 |
| work_keys_str_mv | AT roshnabraj tradeoffsencounteredintraditionalmobilityenhancementtechniquesappliedtocontactcontrolledthinfilmtransistors AT ashutoshkumartripathi tradeoffsencounteredintraditionalmobilityenhancementtechniquesappliedtocontactcontrolledthinfilmtransistors AT shinynair tradeoffsencounteredintraditionalmobilityenhancementtechniquesappliedtocontactcontrolledthinfilmtransistors AT tmukundan tradeoffsencounteredintraditionalmobilityenhancementtechniquesappliedtocontactcontrolledthinfilmtransistors AT tkshahana tradeoffsencounteredintraditionalmobilityenhancementtechniquesappliedtocontactcontrolledthinfilmtransistors |