Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si

Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si

Abstract The chemical vapor deposition (CVD) growth of hexagonal boron nitride (hBN) on Ge substrates is a promising pathway to high‐quality hBN thin films without metal contaminations for microelectronic applications, but the effect of CVD process parameters on the hBN properties is not well unders...

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Bibliographic Details
Main Authors: Max Franck, Jarek Dabrowski, Markus Andreas Schubert, Dominique Vignaud, Mohamed Achehboune, Jean‐François Colomer, Luc Henrard, Christian Wenger, Mindaugas Lukosius
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Materials Interfaces
Subjects:
2D materials
CFD simulations
chemical vapor deposition
CVD
hexagonal boron nitride
Online Access:https://doi.org/10.1002/admi.202400467
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