Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si
Abstract The chemical vapor deposition (CVD) growth of hexagonal boron nitride (hBN) on Ge substrates is a promising pathway to high‐quality hBN thin films without metal contaminations for microelectronic applications, but the effect of CVD process parameters on the hBN properties is not well unders...
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Wiley-VCH
2025-01-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202400467 |
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| author | Max Franck Jarek Dabrowski Markus Andreas Schubert Dominique Vignaud Mohamed Achehboune Jean‐François Colomer Luc Henrard Christian Wenger Mindaugas Lukosius |
| author_facet | Max Franck Jarek Dabrowski Markus Andreas Schubert Dominique Vignaud Mohamed Achehboune Jean‐François Colomer Luc Henrard Christian Wenger Mindaugas Lukosius |
| author_sort | Max Franck |
| collection | DOAJ |
| description | Abstract The chemical vapor deposition (CVD) growth of hexagonal boron nitride (hBN) on Ge substrates is a promising pathway to high‐quality hBN thin films without metal contaminations for microelectronic applications, but the effect of CVD process parameters on the hBN properties is not well understood yet. The influence of local changes in pressure and temperature due to different reactor configurations on the structure and quality of hBN films grown on Ge(001)/Si is studied. Injection of the borazine precursor close to the sample surface results in an inhomogeneous film thickness, attributed to an inhomogeneous pressure distribution at the surface, as shown by computational fluid dynamics simulations. The additional formation of nanocrystalline islands is attributed to unfavorable gas phase reactions due to the radiative heating of the injector. Both issues are mitigated by increasing the injector‐sample distance, leading to an 86% reduction in pressure variability on the sample surface and a 200 °C reduction in precursor temperature. The resulting hBN films exhibit no nanocrystalline islands, improved thickness homogeneity, and high crystalline quality (Raman FWHM = 23 cm−1). This is competitive with hBN films grown on other non‐metal substrates but achieved at lower temperature and with a low thickness of only a few nanometers. |
| format | Article |
| id | doaj-art-61609ca4502442959a50e6480229c986 |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-61609ca4502442959a50e6480229c9862025-01-03T08:39:29ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-01-01121n/an/a10.1002/admi.202400467Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/SiMax Franck0Jarek Dabrowski1Markus Andreas Schubert2Dominique Vignaud3Mohamed Achehboune4Jean‐François Colomer5Luc Henrard6Christian Wenger7Mindaugas Lukosius8IHP – Leibniz‐Institut für innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) GermanyIHP – Leibniz‐Institut für innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) GermanyIHP – Leibniz‐Institut für innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) GermanyUniversity of Lille CNRS University Polytechnique Hauts de France UMR 8520‐IEMN Lille F‐59000 FranceLaboratoire de Physique du Solide Namur Institute of Structured Matter University of Namur Rue de Bruxelles 61 Namur 5000 BelgiumLaboratoire de Physique du Solide Namur Institute of Structured Matter University of Namur Rue de Bruxelles 61 Namur 5000 BelgiumLaboratoire de Physique du Solide Namur Institute of Structured Matter University of Namur Rue de Bruxelles 61 Namur 5000 BelgiumIHP – Leibniz‐Institut für innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) GermanyIHP – Leibniz‐Institut für innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) GermanyAbstract The chemical vapor deposition (CVD) growth of hexagonal boron nitride (hBN) on Ge substrates is a promising pathway to high‐quality hBN thin films without metal contaminations for microelectronic applications, but the effect of CVD process parameters on the hBN properties is not well understood yet. The influence of local changes in pressure and temperature due to different reactor configurations on the structure and quality of hBN films grown on Ge(001)/Si is studied. Injection of the borazine precursor close to the sample surface results in an inhomogeneous film thickness, attributed to an inhomogeneous pressure distribution at the surface, as shown by computational fluid dynamics simulations. The additional formation of nanocrystalline islands is attributed to unfavorable gas phase reactions due to the radiative heating of the injector. Both issues are mitigated by increasing the injector‐sample distance, leading to an 86% reduction in pressure variability on the sample surface and a 200 °C reduction in precursor temperature. The resulting hBN films exhibit no nanocrystalline islands, improved thickness homogeneity, and high crystalline quality (Raman FWHM = 23 cm−1). This is competitive with hBN films grown on other non‐metal substrates but achieved at lower temperature and with a low thickness of only a few nanometers.https://doi.org/10.1002/admi.2024004672D materialsCFD simulationschemical vapor depositionCVDhexagonal boron nitride |
| spellingShingle | Max Franck Jarek Dabrowski Markus Andreas Schubert Dominique Vignaud Mohamed Achehboune Jean‐François Colomer Luc Henrard Christian Wenger Mindaugas Lukosius Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si Advanced Materials Interfaces 2D materials CFD simulations chemical vapor deposition CVD hexagonal boron nitride |
| title | Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si |
| title_full | Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si |
| title_fullStr | Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si |
| title_full_unstemmed | Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si |
| title_short | Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si |
| title_sort | investigating impacts of local pressure and temperature on cvd growth of hexagonal boron nitride on ge 001 si |
| topic | 2D materials CFD simulations chemical vapor deposition CVD hexagonal boron nitride |
| url | https://doi.org/10.1002/admi.202400467 |
| work_keys_str_mv | AT maxfranck investigatingimpactsoflocalpressureandtemperatureoncvdgrowthofhexagonalboronnitrideonge001si AT jarekdabrowski investigatingimpactsoflocalpressureandtemperatureoncvdgrowthofhexagonalboronnitrideonge001si AT markusandreasschubert investigatingimpactsoflocalpressureandtemperatureoncvdgrowthofhexagonalboronnitrideonge001si AT dominiquevignaud investigatingimpactsoflocalpressureandtemperatureoncvdgrowthofhexagonalboronnitrideonge001si AT mohamedachehboune investigatingimpactsoflocalpressureandtemperatureoncvdgrowthofhexagonalboronnitrideonge001si AT jeanfrancoiscolomer investigatingimpactsoflocalpressureandtemperatureoncvdgrowthofhexagonalboronnitrideonge001si AT luchenrard investigatingimpactsoflocalpressureandtemperatureoncvdgrowthofhexagonalboronnitrideonge001si AT christianwenger investigatingimpactsoflocalpressureandtemperatureoncvdgrowthofhexagonalboronnitrideonge001si AT mindaugaslukosius investigatingimpactsoflocalpressureandtemperatureoncvdgrowthofhexagonalboronnitrideonge001si |