A Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data Centers

A Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data Centers

This study presents a novel topology designed to enhance the energy efficiency and quality of IGBT-based high-frequency rectifiers, which are commonly used to supply the high DC power required in industrial applications. In the proposed design, traditional silicon semiconductors are replaced with ad...

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Bibliographic Details
Main Authors:	Fatih Yalçın, Hüseyin Köse, Asuman Savaşcıhabeş
Format:	Article
Language:	English
Published:	MDPI AG 2025-01-01
Series:	Energies
Subjects:	silicon carbide SiC IGBT NPC rectifier switching
Online Access:	https://www.mdpi.com/1996-1073/18/2/348
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