Monolithically Integrated and Galvanically Isolated GaN Gate Driver
In this work, a novel monolithically integrated and galvanically isolated GaN gate driver is presented, which combines the separated power and data link of conventional Si-based solutions. The core is an integrated spiral transformer, which is driven on the primary side by a VHF class-D oscillator w...
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Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2025-01-01
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Series: | IEEE Open Journal of Power Electronics |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10818573/ |
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