Monolithically Integrated and Galvanically Isolated GaN Gate Driver
In this work, a novel monolithically integrated and galvanically isolated GaN gate driver is presented, which combines the separated power and data link of conventional Si-based solutions. The core is an integrated spiral transformer, which is driven on the primary side by a VHF class-D oscillator w...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Open Journal of Power Electronics |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10818573/ |
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| Summary: | In this work, a novel monolithically integrated and galvanically isolated GaN gate driver is presented, which combines the separated power and data link of conventional Si-based solutions. The core is an integrated spiral transformer, which is driven on the primary side by a VHF class-D oscillator with on-off keying modulated by the PWM signal. On the secondary side, the signal is rectified and a network ensures the correct off-state. The driver was operated with PWM signals of up to 2 MHz with only one supply voltage of 8 V on the primary side. This GaN IC shows the potential to be integrated with the power transistor in the future to provide a highly compact isolated driver solution on chip. |
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| ISSN: | 2644-1314 |