Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate
Here, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2024-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ad8f0e |
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| author | Mohammed A. Najmi Rawan S. Jalmood Ivan Kotov Cesur Altinkaya Wakana Takeuchi Daisuke Iida Kazuhiro Ohkawa |
| author_facet | Mohammed A. Najmi Rawan S. Jalmood Ivan Kotov Cesur Altinkaya Wakana Takeuchi Daisuke Iida Kazuhiro Ohkawa |
| author_sort | Mohammed A. Najmi |
| collection | DOAJ |
| description | Here, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a current injection of 40 mA (10.5 A cm ^−2 ). The light output power and external quantum efficiency were 12.6 μ W and 0.016% at 40 mA (10.5 A cm ^−2 ), respectively. These results are expected to contribute to the development of longer-wavelength emission LEDs and laser diodes. |
| format | Article |
| id | doaj-art-5c5b9b58f7f0454cbf7caf3c2ebcd438 |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-5c5b9b58f7f0454cbf7caf3c2ebcd4382024-11-27T09:50:22ZengIOP PublishingApplied Physics Express1882-07862024-01-01171111100110.35848/1882-0786/ad8f0eRed light-emitting diode with full InGaN structure on a ScAlMgO4 substrateMohammed A. Najmi0https://orcid.org/0000-0002-3214-6683Rawan S. Jalmood1Ivan Kotov2Cesur Altinkaya3Wakana Takeuchi4Daisuke Iida5https://orcid.org/0000-0002-5385-6238Kazuhiro Ohkawa6https://orcid.org/0000-0002-8728-3503Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi ArabiaMaterial Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi ArabiaElectrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi ArabiaMaterial Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi ArabiaElectrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia; Department of Electrical and Electronics Engineering, Aichi Institute of Technology , 1247 Yachigusa Yakusa-cho, Toyota, Aichi 470-0392, JapanElectrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi ArabiaElectrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi ArabiaHere, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a current injection of 40 mA (10.5 A cm ^−2 ). The light output power and external quantum efficiency were 12.6 μ W and 0.016% at 40 mA (10.5 A cm ^−2 ), respectively. These results are expected to contribute to the development of longer-wavelength emission LEDs and laser diodes.https://doi.org/10.35848/1882-0786/ad8f0eInGaNScAlMgO4LEDsMOVPE |
| spellingShingle | Mohammed A. Najmi Rawan S. Jalmood Ivan Kotov Cesur Altinkaya Wakana Takeuchi Daisuke Iida Kazuhiro Ohkawa Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate Applied Physics Express InGaN ScAlMgO4 LEDs MOVPE |
| title | Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate |
| title_full | Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate |
| title_fullStr | Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate |
| title_full_unstemmed | Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate |
| title_short | Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate |
| title_sort | red light emitting diode with full ingan structure on a scalmgo4 substrate |
| topic | InGaN ScAlMgO4 LEDs MOVPE |
| url | https://doi.org/10.35848/1882-0786/ad8f0e |
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