Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate
Here, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2024-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ad8f0e |
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| Summary: | Here, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a current injection of 40 mA (10.5 A cm ^−2 ). The light output power and external quantum efficiency were 12.6 μ W and 0.016% at 40 mA (10.5 A cm ^−2 ), respectively. These results are expected to contribute to the development of longer-wavelength emission LEDs and laser diodes. |
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| ISSN: | 1882-0786 |