Moiré band structure engineering using a twisted boron nitride substrate
Abstract Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moiré substrate for band structure engineering. Small-angle-twi...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-55432-2 |
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| author | Xirui Wang Cheng Xu Samuel Aronson Daniel Bennett Nisarga Paul Philip J. D. Crowley Clément Collignon Kenji Watanabe Takashi Taniguchi Raymond Ashoori Efthimios Kaxiras Yang Zhang Pablo Jarillo-Herrero Kenji Yasuda |
| author_facet | Xirui Wang Cheng Xu Samuel Aronson Daniel Bennett Nisarga Paul Philip J. D. Crowley Clément Collignon Kenji Watanabe Takashi Taniguchi Raymond Ashoori Efthimios Kaxiras Yang Zhang Pablo Jarillo-Herrero Kenji Yasuda |
| author_sort | Xirui Wang |
| collection | DOAJ |
| description | Abstract Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moiré substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic electrostatic potential on a target two-dimensional (2D) material placed on top. As a proof of concept, we use Bernal bilayer graphene as the target material. The resulting modulation of the band structure appears as superlattice resistance peaks, tunable by varying the twist angle, and Hofstadter butterfly physics under a magnetic field. Additionally, we demonstrate the tunability of the moiré potential by altering the dielectric thickness underneath the twisted BN. Finally, we find that near-60°-twisted bilayer BN also leads to moiré band features in bilayer graphene, which may come from the in-plane piezoelectric effect or out-of-plane corrugation effect. Tunable twisted BN substrate may serve as versatile platforms to engineer the electronic, optical, and mechanical properties of 2D materials and van der Waals heterostructures. |
| format | Article |
| id | doaj-art-5a957087425f4fc495cc4fe933bcdf25 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-5a957087425f4fc495cc4fe933bcdf252025-01-05T12:40:45ZengNature PortfolioNature Communications2041-17232025-01-011611810.1038/s41467-024-55432-2Moiré band structure engineering using a twisted boron nitride substrateXirui Wang0Cheng Xu1Samuel Aronson2Daniel Bennett3Nisarga Paul4Philip J. D. Crowley5Clément Collignon6Kenji Watanabe7Takashi Taniguchi8Raymond Ashoori9Efthimios Kaxiras10Yang Zhang11Pablo Jarillo-Herrero12Kenji Yasuda13Department of Physics, Massachusetts Institute of TechnologyDepartment of Physics and Astronomy, University of TennesseeDepartment of Physics, Massachusetts Institute of TechnologyJohn A. Paulson School of Engineering and Applied Sciences, Harvard UniversityDepartment of Physics, Massachusetts Institute of TechnologyDepartment of Physics, Harvard UniversityDepartment of Physics, Massachusetts Institute of TechnologyResearch Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 NamikiResearch Center for Materials Nanoarchitectonics, National Institute for Materials Scim- ence, 1-1 NamikiDepartment of Physics, Massachusetts Institute of TechnologyJohn A. Paulson School of Engineering and Applied Sciences, Harvard UniversityDepartment of Physics and Astronomy, University of TennesseeDepartment of Physics, Massachusetts Institute of TechnologyDepartment of Physics, Massachusetts Institute of TechnologyAbstract Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moiré substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic electrostatic potential on a target two-dimensional (2D) material placed on top. As a proof of concept, we use Bernal bilayer graphene as the target material. The resulting modulation of the band structure appears as superlattice resistance peaks, tunable by varying the twist angle, and Hofstadter butterfly physics under a magnetic field. Additionally, we demonstrate the tunability of the moiré potential by altering the dielectric thickness underneath the twisted BN. Finally, we find that near-60°-twisted bilayer BN also leads to moiré band features in bilayer graphene, which may come from the in-plane piezoelectric effect or out-of-plane corrugation effect. Tunable twisted BN substrate may serve as versatile platforms to engineer the electronic, optical, and mechanical properties of 2D materials and van der Waals heterostructures.https://doi.org/10.1038/s41467-024-55432-2 |
| spellingShingle | Xirui Wang Cheng Xu Samuel Aronson Daniel Bennett Nisarga Paul Philip J. D. Crowley Clément Collignon Kenji Watanabe Takashi Taniguchi Raymond Ashoori Efthimios Kaxiras Yang Zhang Pablo Jarillo-Herrero Kenji Yasuda Moiré band structure engineering using a twisted boron nitride substrate Nature Communications |
| title | Moiré band structure engineering using a twisted boron nitride substrate |
| title_full | Moiré band structure engineering using a twisted boron nitride substrate |
| title_fullStr | Moiré band structure engineering using a twisted boron nitride substrate |
| title_full_unstemmed | Moiré band structure engineering using a twisted boron nitride substrate |
| title_short | Moiré band structure engineering using a twisted boron nitride substrate |
| title_sort | moire band structure engineering using a twisted boron nitride substrate |
| url | https://doi.org/10.1038/s41467-024-55432-2 |
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