Stacking Order-Dependent Electronic and Optical Properties of h-BP/Borophosphene Van Der Waals Heterostructures

Van der Waals (vdW) heterostructures, typically composed of two-dimensional (2D) atomic layers, have attracted significant attention over the past few decades. Their performance is closely dependent on their composition and interlayer interactions. In this study, we constructed four types of 2D hexa...

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Main Authors: Kejing Ren, Quan Zhang, Shengli Zhang, Yang Zhang
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Nanomaterials
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Online Access:https://www.mdpi.com/2079-4991/15/15/1155
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author Kejing Ren
Quan Zhang
Shengli Zhang
Yang Zhang
author_facet Kejing Ren
Quan Zhang
Shengli Zhang
Yang Zhang
author_sort Kejing Ren
collection DOAJ
description Van der Waals (vdW) heterostructures, typically composed of two-dimensional (2D) atomic layers, have attracted significant attention over the past few decades. Their performance is closely dependent on their composition and interlayer interactions. In this study, we constructed four types of 2D hexagonal BP monolayer (h-BP)/borophosphene vdW heterostructures with different stacking orders: (i) B-B stacking, (ii) P-P stacking, (iii) moire-I, and (iv) moire-II. Their structural stability and their electronic and optical properties were explored by using first-principles calculations. The results show that h-BP/borophosphene heterostructures can maintain their configurations with good structural stability and minimal lattice mismatch. All vdW heterostructures exhibit semiconducting characteristics, and their band gaps are highly dependent on interlayer stacking orders. Due to the regular atomic arrangement and enhanced interlayer dipole interactions, the B-B stacking bilayer opens a relatively large band gap of 0.157 eV, while the moire-II bilayer exhibits a very small band gap of 0.045 eV because of its irregular atom arrangements. By calculating the complex dielectric function, optical absorption spectra of B-B and P-P stacking bilayers were discussed. This study suggests that h-BP/borophosphene heterostructures have desirable optical properties, broadening the potential applications of the constituent monolayers.
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spelling doaj-art-5991afbcd5cb4a62a978d3c1b2d2a5b52025-08-20T03:36:22ZengMDPI AGNanomaterials2079-49912025-07-011515115510.3390/nano15151155Stacking Order-Dependent Electronic and Optical Properties of h-BP/Borophosphene Van Der Waals HeterostructuresKejing Ren0Quan Zhang1Shengli Zhang2Yang Zhang3Ministry of Education Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi’an Jiaotong University, Xi’an 710049, ChinaMinistry of Education Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi’an Jiaotong University, Xi’an 710049, ChinaMinistry of Education Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi’an Jiaotong University, Xi’an 710049, ChinaMinistry of Education Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi’an Jiaotong University, Xi’an 710049, ChinaVan der Waals (vdW) heterostructures, typically composed of two-dimensional (2D) atomic layers, have attracted significant attention over the past few decades. Their performance is closely dependent on their composition and interlayer interactions. In this study, we constructed four types of 2D hexagonal BP monolayer (h-BP)/borophosphene vdW heterostructures with different stacking orders: (i) B-B stacking, (ii) P-P stacking, (iii) moire-I, and (iv) moire-II. Their structural stability and their electronic and optical properties were explored by using first-principles calculations. The results show that h-BP/borophosphene heterostructures can maintain their configurations with good structural stability and minimal lattice mismatch. All vdW heterostructures exhibit semiconducting characteristics, and their band gaps are highly dependent on interlayer stacking orders. Due to the regular atomic arrangement and enhanced interlayer dipole interactions, the B-B stacking bilayer opens a relatively large band gap of 0.157 eV, while the moire-II bilayer exhibits a very small band gap of 0.045 eV because of its irregular atom arrangements. By calculating the complex dielectric function, optical absorption spectra of B-B and P-P stacking bilayers were discussed. This study suggests that h-BP/borophosphene heterostructures have desirable optical properties, broadening the potential applications of the constituent monolayers.https://www.mdpi.com/2079-4991/15/15/1155vdW heterostructurestructural stabilityelectronic propertyoptical absorption spectrafirst-principles study
spellingShingle Kejing Ren
Quan Zhang
Shengli Zhang
Yang Zhang
Stacking Order-Dependent Electronic and Optical Properties of h-BP/Borophosphene Van Der Waals Heterostructures
Nanomaterials
vdW heterostructure
structural stability
electronic property
optical absorption spectra
first-principles study
title Stacking Order-Dependent Electronic and Optical Properties of h-BP/Borophosphene Van Der Waals Heterostructures
title_full Stacking Order-Dependent Electronic and Optical Properties of h-BP/Borophosphene Van Der Waals Heterostructures
title_fullStr Stacking Order-Dependent Electronic and Optical Properties of h-BP/Borophosphene Van Der Waals Heterostructures
title_full_unstemmed Stacking Order-Dependent Electronic and Optical Properties of h-BP/Borophosphene Van Der Waals Heterostructures
title_short Stacking Order-Dependent Electronic and Optical Properties of h-BP/Borophosphene Van Der Waals Heterostructures
title_sort stacking order dependent electronic and optical properties of h bp borophosphene van der waals heterostructures
topic vdW heterostructure
structural stability
electronic property
optical absorption spectra
first-principles study
url https://www.mdpi.com/2079-4991/15/15/1155
work_keys_str_mv AT kejingren stackingorderdependentelectronicandopticalpropertiesofhbpborophosphenevanderwaalsheterostructures
AT quanzhang stackingorderdependentelectronicandopticalpropertiesofhbpborophosphenevanderwaalsheterostructures
AT shenglizhang stackingorderdependentelectronicandopticalpropertiesofhbpborophosphenevanderwaalsheterostructures
AT yangzhang stackingorderdependentelectronicandopticalpropertiesofhbpborophosphenevanderwaalsheterostructures