Drastic enhancements of direct and indirect light emissions from Ge microbridge web-structures via efficient light confinements
Drastic enhancements of both direct and indirect light emissions are demonstrated from Ge microbridge web-structures fabricated based on the strained Ge-on-Si (110) substrate. This enhancement is concluded to be caused more predominantly by the light confinement effect in several-μm-scale microbridg...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ada086 |
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| Summary: | Drastic enhancements of both direct and indirect light emissions are demonstrated from Ge microbridge web-structures fabricated based on the strained Ge-on-Si (110) substrate. This enhancement is concluded to be caused more predominantly by the light confinement effect in several-μm-scale microbridges than the induced strain. It is also remarkable that this effect works very well with a strain as small as 0.4%, making the fabrication procedure very easy and bridges very stable and rigid. These findings will, therefore, widen the applicability and raise the potentiality of here-proposed Ge web-structure microbridges toward Si optical integrated circuits. |
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| ISSN: | 1882-0786 |