Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET
This study investigates the degradation mechanisms of 1200 V SiC MOSFETs during High-temperature Reverse Bias (HTRB) reliability testing, focusing on breakdown voltage (BV) reduction. Experimental results reveal that trapped charges at the SiC/SiO<sub>2</sub> interface in the termination...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/11/805 |
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