Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET

Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET

This study investigates the degradation mechanisms of 1200 V SiC MOSFETs during High-temperature Reverse Bias (HTRB) reliability testing, focusing on breakdown voltage (BV) reduction. Experimental results reveal that trapped charges at the SiC/SiO<sub>2</sub> interface in the termination...

Full description

Saved in:
Bibliographic Details
Main Authors: Mengyuan Yu, Yi Shen, Hongping Ma, Qingchun Zhang
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Nanomaterials
Subjects:
SiC MOSFET
termination
breakdown voltage
Online Access:https://www.mdpi.com/2079-4991/15/11/805
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items

Similar Items