Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET
This study investigates the degradation mechanisms of 1200 V SiC MOSFETs during High-temperature Reverse Bias (HTRB) reliability testing, focusing on breakdown voltage (BV) reduction. Experimental results reveal that trapped charges at the SiC/SiO<sub>2</sub> interface in the termination...
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| Language: | English |
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MDPI AG
2025-05-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/11/805 |
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| author | Mengyuan Yu Yi Shen Hongping Ma Qingchun Zhang |
| author_facet | Mengyuan Yu Yi Shen Hongping Ma Qingchun Zhang |
| author_sort | Mengyuan Yu |
| collection | DOAJ |
| description | This study investigates the degradation mechanisms of 1200 V SiC MOSFETs during High-temperature Reverse Bias (HTRB) reliability testing, focusing on breakdown voltage (BV) reduction. Experimental results reveal that trapped charges at the SiC/SiO<sub>2</sub> interface in the termination region alter electric field distribution, leading to premature breakdown. To address this issue, an optimized termination structure is proposed, incorporating reduced spacing between adjacent field rings and additional outer rings. TCAD simulations and experimental validation demonstrate that the improved design stabilizes BV within 2% deviation during 1000 h HTRB testing, which significantly enhances termination robustness. |
| format | Article |
| id | doaj-art-58c2d88a6b4546f1b995d2511b275b49 |
| institution | DOAJ |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-58c2d88a6b4546f1b995d2511b275b492025-08-20T03:11:22ZengMDPI AGNanomaterials2079-49912025-05-01151180510.3390/nano15110805Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFETMengyuan Yu0Yi Shen1Hongping Ma2Qingchun Zhang3Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, ChinaInstitute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, ChinaInstitute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, ChinaInstitute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, ChinaThis study investigates the degradation mechanisms of 1200 V SiC MOSFETs during High-temperature Reverse Bias (HTRB) reliability testing, focusing on breakdown voltage (BV) reduction. Experimental results reveal that trapped charges at the SiC/SiO<sub>2</sub> interface in the termination region alter electric field distribution, leading to premature breakdown. To address this issue, an optimized termination structure is proposed, incorporating reduced spacing between adjacent field rings and additional outer rings. TCAD simulations and experimental validation demonstrate that the improved design stabilizes BV within 2% deviation during 1000 h HTRB testing, which significantly enhances termination robustness.https://www.mdpi.com/2079-4991/15/11/805SiC MOSFETterminationbreakdown voltage |
| spellingShingle | Mengyuan Yu Yi Shen Hongping Ma Qingchun Zhang Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET Nanomaterials SiC MOSFET termination breakdown voltage |
| title | Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET |
| title_full | Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET |
| title_fullStr | Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET |
| title_full_unstemmed | Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET |
| title_short | Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET |
| title_sort | experiment and analysis of termination robustness design for 1200 v 4h sic mosfet |
| topic | SiC MOSFET termination breakdown voltage |
| url | https://www.mdpi.com/2079-4991/15/11/805 |
| work_keys_str_mv | AT mengyuanyu experimentandanalysisofterminationrobustnessdesignfor1200v4hsicmosfet AT yishen experimentandanalysisofterminationrobustnessdesignfor1200v4hsicmosfet AT hongpingma experimentandanalysisofterminationrobustnessdesignfor1200v4hsicmosfet AT qingchunzhang experimentandanalysisofterminationrobustnessdesignfor1200v4hsicmosfet |