APA (7th ed.) Citation

Yu, M., Shen, Y., Ma, H., & Zhang, Q. Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. MDPI AG.

Chicago Style (17th ed.) Citation

Yu, Mengyuan, Yi Shen, Hongping Ma, and Qingchun Zhang. Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. MDPI AG.

MLA (9th ed.) Citation

Yu, Mengyuan, et al. Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. MDPI AG.