DEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD
The paper proposes a method for depth measurement of a disrupted layer on silicon wafer surface which is based on application of Auger spectroscopy with the precision sputtering of surface silicon layers and registration of the Auger electron yield intensity. In order to measure the disrupted layer...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Belarusian National Technical University
2016-08-01
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| Series: | Наука и техника |
| Subjects: | |
| Online Access: | https://sat.bntu.by/jour/article/view/938 |
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