Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature
Abstract The discovery of ferromagnetism in van der Waals (vdW) materials has enriched the understanding of two-dimensional (2D) magnetic orders and opened new avenues for fundamental physics research and next generation spintronics. However, achieving ferromagnetic order at room temperature, along...
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Nature Portfolio
2024-12-01
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| Online Access: | https://doi.org/10.1038/s41467-024-54936-1 |
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| author | Shuxiang Wu Zhihao He Minghui Gu Lizhu Ren Jibin Li Bo Deng Di Wang Xinhao Guo Wanjiong Li Mingyi Chen Yijun Chen Meng Meng Quanlin Ye Bing Shen Xinman Chen Jiandong Guo Guozhong Xing Iam Keong Sou Shuwei Li |
| author_facet | Shuxiang Wu Zhihao He Minghui Gu Lizhu Ren Jibin Li Bo Deng Di Wang Xinhao Guo Wanjiong Li Mingyi Chen Yijun Chen Meng Meng Quanlin Ye Bing Shen Xinman Chen Jiandong Guo Guozhong Xing Iam Keong Sou Shuwei Li |
| author_sort | Shuxiang Wu |
| collection | DOAJ |
| description | Abstract The discovery of ferromagnetism in van der Waals (vdW) materials has enriched the understanding of two-dimensional (2D) magnetic orders and opened new avenues for fundamental physics research and next generation spintronics. However, achieving ferromagnetic order at room temperature, along with strong perpendicular magnetic anisotropy, remains a significant challenge. In this work, we report wafer-scale growth of vdW ferromagnet Fe3GaTe2 using molecular beam epitaxy. The epitaxial Fe3GaTe2 films exhibit robust ferromagnetism, exemplified by high Curie temperature (T C = 420 K) and large perpendicular magnetic anisotropy (PMA) constant K U = 6.7 × 105 J/m3 at 300 K for nine-unit-cell film. Notably, the ferromagnetic order is preserved even in the one-unit-cell film with T C reaching 345 K, benefiting from the strong PMA (K U = 1.8×105 J/m3 at 300 K). In comparison to exfoliated Fe3GaTe2 flakes, our epitaxial films with the same thickness show the significant enhancement of T C, which could be ascribed to the tensile strain effect from the substrate. The successful realization of wafer-scale ferromagnetic Fe3GaTe2 films with T C far above room temperature represents a substantial advancement (in some aspects or some fields, e.g. material science), paving the way for the development of 2D magnet-based spintronic devices. |
| format | Article |
| id | doaj-art-57c94e3fbbad4372aba911a141465952 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-57c94e3fbbad4372aba911a1414659522025-01-05T12:36:09ZengNature PortfolioNature Communications2041-17232024-12-011511710.1038/s41467-024-54936-1Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperatureShuxiang Wu0Zhihao He1Minghui Gu2Lizhu Ren3Jibin Li4Bo Deng5Di Wang6Xinhao Guo7Wanjiong Li8Mingyi Chen9Yijun Chen10Meng Meng11Quanlin Ye12Bing Shen13Xinman Chen14Jiandong Guo15Guozhong Xing16Iam Keong Sou17Shuwei Li18School of Materials Science and Engineering, Sun Yat-sen UniversityDepartment of Physics, The Hong Kong University of Science and TechnologyBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesDepartment of Electrical and Computer Engineering, National University of SingaporeGuangdong Engineering Research Center of Optoelectronic Functional Materials and Device, School of Electronic Science and Engineering (School of Microelectronics), South China Normal UniversityHangzhou Key Laboratory of Quantum Matter, School of Physics, Hangzhou Normal UniversityInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029; University of Chinese Academy of SciencesSchool of Materials Science and Engineering, Sun Yat-sen UniversitySchool of Materials Science and Engineering, Sun Yat-sen UniversitySchool of Materials Science and Engineering, Sun Yat-sen UniversitySchool of Materials Science and Engineering, Sun Yat-sen UniversityBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesHangzhou Key Laboratory of Quantum Matter, School of Physics, Hangzhou Normal UniversitySchool of Physics, Sun Yat-sen UniversityGuangdong Engineering Research Center of Optoelectronic Functional Materials and Device, School of Electronic Science and Engineering (School of Microelectronics), South China Normal UniversityBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029; University of Chinese Academy of SciencesDepartment of Physics, The Hong Kong University of Science and TechnologySchool of Materials Science and Engineering, Sun Yat-sen UniversityAbstract The discovery of ferromagnetism in van der Waals (vdW) materials has enriched the understanding of two-dimensional (2D) magnetic orders and opened new avenues for fundamental physics research and next generation spintronics. However, achieving ferromagnetic order at room temperature, along with strong perpendicular magnetic anisotropy, remains a significant challenge. In this work, we report wafer-scale growth of vdW ferromagnet Fe3GaTe2 using molecular beam epitaxy. The epitaxial Fe3GaTe2 films exhibit robust ferromagnetism, exemplified by high Curie temperature (T C = 420 K) and large perpendicular magnetic anisotropy (PMA) constant K U = 6.7 × 105 J/m3 at 300 K for nine-unit-cell film. Notably, the ferromagnetic order is preserved even in the one-unit-cell film with T C reaching 345 K, benefiting from the strong PMA (K U = 1.8×105 J/m3 at 300 K). In comparison to exfoliated Fe3GaTe2 flakes, our epitaxial films with the same thickness show the significant enhancement of T C, which could be ascribed to the tensile strain effect from the substrate. The successful realization of wafer-scale ferromagnetic Fe3GaTe2 films with T C far above room temperature represents a substantial advancement (in some aspects or some fields, e.g. material science), paving the way for the development of 2D magnet-based spintronic devices.https://doi.org/10.1038/s41467-024-54936-1 |
| spellingShingle | Shuxiang Wu Zhihao He Minghui Gu Lizhu Ren Jibin Li Bo Deng Di Wang Xinhao Guo Wanjiong Li Mingyi Chen Yijun Chen Meng Meng Quanlin Ye Bing Shen Xinman Chen Jiandong Guo Guozhong Xing Iam Keong Sou Shuwei Li Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature Nature Communications |
| title | Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature |
| title_full | Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature |
| title_fullStr | Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature |
| title_full_unstemmed | Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature |
| title_short | Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature |
| title_sort | robust ferromagnetism in wafer scale fe3gate2 above room temperature |
| url | https://doi.org/10.1038/s41467-024-54936-1 |
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