Ultrawide bandgap semiconductor h-BN for direct detection of fast neutrons
III-nitride wide bandgap semiconductors have contributed on the grandest scale to many technological advances in lighting, displays, and power electronics. Among III-nitrides, BN has another unique application as a solid-state neutron detector material because the isotope B-10 is among a few element...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0232896 |
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