Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications

Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications

Abstract Oxidation of 2D layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low‐power electronic devices. Gallium (II) sulfide (β‐GaS), a hexagonal phase group III monochalcogenide, is a wide bandgap semiconductor with a b...

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Bibliographic Details
Main Authors: AbdulAziz AlMutairi, Aferdita Xhameni, Xuyun Guo, Irina Chircă, Valeria Nicolosi, Stephan Hofmann, Antonio Lombardo
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Materials Interfaces
Subjects:
2D material
oxidation
gallium sulfide
gallium oxide
neuromorphic
ReRAM
Online Access:https://doi.org/10.1002/admi.202400481
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