Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications
Abstract Oxidation of 2D layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low‐power electronic devices. Gallium (II) sulfide (β‐GaS), a hexagonal phase group III monochalcogenide, is a wide bandgap semiconductor with a b...
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Wiley-VCH
2025-01-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202400481 |
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| author | AbdulAziz AlMutairi Aferdita Xhameni Xuyun Guo Irina Chircă Valeria Nicolosi Stephan Hofmann Antonio Lombardo |
| author_facet | AbdulAziz AlMutairi Aferdita Xhameni Xuyun Guo Irina Chircă Valeria Nicolosi Stephan Hofmann Antonio Lombardo |
| author_sort | AbdulAziz AlMutairi |
| collection | DOAJ |
| description | Abstract Oxidation of 2D layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low‐power electronic devices. Gallium (II) sulfide (β‐GaS), a hexagonal phase group III monochalcogenide, is a wide bandgap semiconductor with a bandgap exceeding 3 eV in single and few‐layer form. Its oxide, gallium oxide (Ga2O3), combines a large bandgap (4.4–5.3 eV) with a high dielectric constant (≈10). Despite the technological potential of both materials, controlled oxidation of atomically‐thin β‐GaS remains under‐explored. This study focuses on the controlled oxidation of β‐GaS using oxygen plasma treatment, addressing a significant gap in existing research. The results demonstrate the ability to form ultrathin native oxide (GaSxOy), 4 nm in thickness, upon exposure to 10 W of O2, resulting in a GaSxOy/GaS heterostructure where the GaS layer beneath remains intact. By integrating such structures between metal electrodes and applying electric stresses as voltage ramps or pulses, their use for resistive random‐access memory (ReRAM) is investigated. The ultrathin nature of the produced oxide enables low operation power with energy use as low as 0.22 nJ per operation while maintaining endurance and retention of 350 cycles and 104 s, respectively. These results show the significant potential of the oxidation‐based GaSxOy/GaS heterostructure for electronic applications and, in particular, low‐power memory devices. |
| format | Article |
| id | doaj-art-55ae09b495174ebea610f60934fa4618 |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
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| series | Advanced Materials Interfaces |
| spelling | doaj-art-55ae09b495174ebea610f60934fa46182025-01-03T08:39:29ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-01-01121n/an/a10.1002/admi.202400481Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic ApplicationsAbdulAziz AlMutairi0Aferdita Xhameni1Xuyun Guo2Irina Chircă3Valeria Nicolosi4Stephan Hofmann5Antonio Lombardo6Department of Engineering University of Cambridge Cambridge CB2 1PZ UKLondon Centre for Nanotechnology 19 Gordon St London WC1H 0AH UKAdvanced Materials and BioEngineering Research (AMBER) Centre at Trinity College Dublin and the Royal College of Surgeons in Ireland Dublin 2 D02 PN40 IrelandDepartment of Engineering University of Cambridge Cambridge CB2 1PZ UKAdvanced Materials and BioEngineering Research (AMBER) Centre at Trinity College Dublin and the Royal College of Surgeons in Ireland Dublin 2 D02 PN40 IrelandDepartment of Engineering University of Cambridge Cambridge CB2 1PZ UKLondon Centre for Nanotechnology 19 Gordon St London WC1H 0AH UKAbstract Oxidation of 2D layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low‐power electronic devices. Gallium (II) sulfide (β‐GaS), a hexagonal phase group III monochalcogenide, is a wide bandgap semiconductor with a bandgap exceeding 3 eV in single and few‐layer form. Its oxide, gallium oxide (Ga2O3), combines a large bandgap (4.4–5.3 eV) with a high dielectric constant (≈10). Despite the technological potential of both materials, controlled oxidation of atomically‐thin β‐GaS remains under‐explored. This study focuses on the controlled oxidation of β‐GaS using oxygen plasma treatment, addressing a significant gap in existing research. The results demonstrate the ability to form ultrathin native oxide (GaSxOy), 4 nm in thickness, upon exposure to 10 W of O2, resulting in a GaSxOy/GaS heterostructure where the GaS layer beneath remains intact. By integrating such structures between metal electrodes and applying electric stresses as voltage ramps or pulses, their use for resistive random‐access memory (ReRAM) is investigated. The ultrathin nature of the produced oxide enables low operation power with energy use as low as 0.22 nJ per operation while maintaining endurance and retention of 350 cycles and 104 s, respectively. These results show the significant potential of the oxidation‐based GaSxOy/GaS heterostructure for electronic applications and, in particular, low‐power memory devices.https://doi.org/10.1002/admi.2024004812D materialoxidationgallium sulfidegallium oxideneuromorphicReRAM |
| spellingShingle | AbdulAziz AlMutairi Aferdita Xhameni Xuyun Guo Irina Chircă Valeria Nicolosi Stephan Hofmann Antonio Lombardo Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications Advanced Materials Interfaces 2D material oxidation gallium sulfide gallium oxide neuromorphic ReRAM |
| title | Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications |
| title_full | Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications |
| title_fullStr | Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications |
| title_full_unstemmed | Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications |
| title_short | Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications |
| title_sort | controlled fabrication of native ultra thin amorphous gallium oxide from 2d gallium sulfide for emerging electronic applications |
| topic | 2D material oxidation gallium sulfide gallium oxide neuromorphic ReRAM |
| url | https://doi.org/10.1002/admi.202400481 |
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