GROWTH OF SINGLE CRYSTALS, PHOTOELECTRIC PROPERTIES AND THE ABSORPTION EDGE OF A NEW LAYERED CuGa2.5In2.5S8 COMPOUND

In this article, the conditions for obtaining monocrystals of CuGa2.5In2.5S8, were investigated, their optical absorption edge, electrical and photoelectric properties. Using the criteria for the formation of new layered chalcogenides with octahedral and tetrahedral coordination...

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Main Authors: ARAMA, Efim, PINTEA, Valentina, SHEMYAKOVA, Tatiana, GASITOI, Natalia
Format: Article
Language:English
Published: Technical University of Moldova 2024-09-01
Series:Journal of Engineering Science (Chişinău)
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Online Access:https://press.utm.md/index.php/jes/article/view/2024-31-3-02/02-pdf
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author ARAMA, Efim
PINTEA, Valentina
SHEMYAKOVA, Tatiana
GASITOI, Natalia
author_facet ARAMA, Efim
PINTEA, Valentina
SHEMYAKOVA, Tatiana
GASITOI, Natalia
author_sort ARAMA, Efim
collection DOAJ
description In this article, the conditions for obtaining monocrystals of CuGa2.5In2.5S8, were investigated, their optical absorption edge, electrical and photoelectric properties. Using the criteria for the formation of new layered chalcogenides with octahedral and tetrahedral coordination of cations, it was hypothesized that due to the replacement of half of the In atoms in the CuIn5S8 spinel with Ga, which has a pronounced tendency to occupy the tetrahedral B sites in a denser packing of S atoms, a layered phase is formed. Melting of a stoichiometric mixture of Cu+2.5Ga+2.5In+8S led to the synthesis of a previously unknown single-phaseproduct with a layered crystalline structure. Since copper, gallium, and indium sulfides are generally good photoconductors, it could be expected that the new compound would also exhibit high photosensitivity. The aim of this work was to investigate the conditions for obtaining of CuGa2.5In2.5S8 single crystals, their optical absorption edge, electrical and photoelectric properties.
format Article
id doaj-art-551550c7b94f474a95cdaeeff2cc2be6
institution Kabale University
issn 2587-3474
2587-3482
language English
publishDate 2024-09-01
publisher Technical University of Moldova
record_format Article
series Journal of Engineering Science (Chişinău)
spelling doaj-art-551550c7b94f474a95cdaeeff2cc2be62025-01-16T10:21:46ZengTechnical University of MoldovaJournal of Engineering Science (Chişinău)2587-34742587-34822024-09-01XXXI31826https://doi.org/10.52326/jes.utm.2024.31(3).02GROWTH OF SINGLE CRYSTALS, PHOTOELECTRIC PROPERTIES AND THE ABSORPTION EDGE OF A NEW LAYERED CuGa2.5In2.5S8 COMPOUNDARAMA, Efim0https://orcid.org/0009-0005-8606-6266PINTEA, Valentina1https://orcid.org/0000-0003-0137-4699SHEMYAKOVA, Tatiana2https://orcid.org/0000-0003-1668-0082GASITOI, Natalia3https://orcid.org/0000-0002-5895-286X„Nicolae Testemitanu” State University of Medicine and Pharmacy, Chisinau, Republic of MoldovaTechnical University of Moldova, Chisinau, Republic of MoldovaInstitute of Applied Physics, Chisinau, Republic of MoldovaAlecu Russo State University of Balti, Department of Mathematics and Informatics,Balti, Republic of MoldovaIn this article, the conditions for obtaining monocrystals of CuGa2.5In2.5S8, were investigated, their optical absorption edge, electrical and photoelectric properties. Using the criteria for the formation of new layered chalcogenides with octahedral and tetrahedral coordination of cations, it was hypothesized that due to the replacement of half of the In atoms in the CuIn5S8 spinel with Ga, which has a pronounced tendency to occupy the tetrahedral B sites in a denser packing of S atoms, a layered phase is formed. Melting of a stoichiometric mixture of Cu+2.5Ga+2.5In+8S led to the synthesis of a previously unknown single-phaseproduct with a layered crystalline structure. Since copper, gallium, and indium sulfides are generally good photoconductors, it could be expected that the new compound would also exhibit high photosensitivity. The aim of this work was to investigate the conditions for obtaining of CuGa2.5In2.5S8 single crystals, their optical absorption edge, electrical and photoelectric properties.https://press.utm.md/index.php/jes/article/view/2024-31-3-02/02-pdfternary semiconductorsoptical absorptionphotoluminescencephotoconductivitychalcogenides
spellingShingle ARAMA, Efim
PINTEA, Valentina
SHEMYAKOVA, Tatiana
GASITOI, Natalia
GROWTH OF SINGLE CRYSTALS, PHOTOELECTRIC PROPERTIES AND THE ABSORPTION EDGE OF A NEW LAYERED CuGa2.5In2.5S8 COMPOUND
Journal of Engineering Science (Chişinău)
ternary semiconductors
optical absorption
photoluminescence
photoconductivity
chalcogenides
title GROWTH OF SINGLE CRYSTALS, PHOTOELECTRIC PROPERTIES AND THE ABSORPTION EDGE OF A NEW LAYERED CuGa2.5In2.5S8 COMPOUND
title_full GROWTH OF SINGLE CRYSTALS, PHOTOELECTRIC PROPERTIES AND THE ABSORPTION EDGE OF A NEW LAYERED CuGa2.5In2.5S8 COMPOUND
title_fullStr GROWTH OF SINGLE CRYSTALS, PHOTOELECTRIC PROPERTIES AND THE ABSORPTION EDGE OF A NEW LAYERED CuGa2.5In2.5S8 COMPOUND
title_full_unstemmed GROWTH OF SINGLE CRYSTALS, PHOTOELECTRIC PROPERTIES AND THE ABSORPTION EDGE OF A NEW LAYERED CuGa2.5In2.5S8 COMPOUND
title_short GROWTH OF SINGLE CRYSTALS, PHOTOELECTRIC PROPERTIES AND THE ABSORPTION EDGE OF A NEW LAYERED CuGa2.5In2.5S8 COMPOUND
title_sort growth of single crystals photoelectric properties and the absorption edge of a new layered cuga2 5in2 5s8 compound
topic ternary semiconductors
optical absorption
photoluminescence
photoconductivity
chalcogenides
url https://press.utm.md/index.php/jes/article/view/2024-31-3-02/02-pdf
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AT pinteavalentina growthofsinglecrystalsphotoelectricpropertiesandtheabsorptionedgeofanewlayeredcuga25in25s8compound
AT shemyakovatatiana growthofsinglecrystalsphotoelectricpropertiesandtheabsorptionedgeofanewlayeredcuga25in25s8compound
AT gasitoinatalia growthofsinglecrystalsphotoelectricpropertiesandtheabsorptionedgeofanewlayeredcuga25in25s8compound