The impact of inserting an InAs quantum dot in the middle subcell of a triple-junction Ga0.51In0.49P/GaAs/Ge solar cell
In this paper, we have investigated the effect of inserting an InAs quantum dot in the middle subcell of triple-junction solar cells on the power conversion efficiency. Ga0.51In0.49P/GaAs/Ge solar cell efficiency is limited by the short circuit current of GaAs (middle subcell). To overcome this curr...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0266186 |
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