Ferroelectric memory: state-of-the-art manufacturing and research
Semiconductor industry calls for emerging memory, demonstrating high speed (like SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good scalability, reduced energy consumption and reasonable cost. Ferroelectric memory FRAM has been considered as one of the emerging memory t...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
MIREA - Russian Technological University
2020-10-01
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| Series: | Российский технологический журнал |
| Subjects: | |
| Online Access: | https://www.rtj-mirea.ru/jour/article/view/249 |
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