Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum Dots
The traditional von Neumann architecture encounters significant limitations in computational efficiency and energy consumption, driving the development of neuromorphic devices. The optoelectronic synaptic device serves as a fundamental hardware foundation for the realization of neuromorphic computin...
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MDPI AG
2025-05-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/9/688 |
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| author | Shuqiong Lan Jinkui Si Wangying Xu Lan Yang Jierui Lin Chen Wu |
| author_facet | Shuqiong Lan Jinkui Si Wangying Xu Lan Yang Jierui Lin Chen Wu |
| author_sort | Shuqiong Lan |
| collection | DOAJ |
| description | The traditional von Neumann architecture encounters significant limitations in computational efficiency and energy consumption, driving the development of neuromorphic devices. The optoelectronic synaptic device serves as a fundamental hardware foundation for the realization of neuromorphic computing and plays a pivotal role in the development of neuromorphic chips. This study develops a ternary heterojunction synaptic transistor based on perovskite quantum dots to tackle the critical challenge of synaptic weight modulation in organic synaptic devices. Compared to binary heterojunction synaptic transistor, the ternary heterojunction synaptic transistor achieves an enhanced hysteresis window due to the synergistic charge-trapping effects of acceptor material and perovskite quantum dots. The memory window decreases with increasing source-drain voltage (V<sub>DS</sub>) but expands with prolonged program/erase time, demonstrating effective carrier trapping modulation. Furthermore, the device successfully emulates typical photonic synaptic behaviors, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), and the transition from short-term plasticity (STP) to long-term plasticity (LTP). This work provides a simplified strategy for high-performance optoelectronic synaptic transistors, showcasing significant potential for neuromorphic computing and adaptive intelligent systems. |
| format | Article |
| id | doaj-art-4e8b1dcadcbc4df28a705c2dd255e9aa |
| institution | Kabale University |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-4e8b1dcadcbc4df28a705c2dd255e9aa2025-08-20T03:49:22ZengMDPI AGNanomaterials2079-49912025-05-0115968810.3390/nano15090688Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum DotsShuqiong Lan0Jinkui Si1Wangying Xu2Lan Yang3Jierui Lin4Chen Wu5Department of Physics, School of Science, Jimei University, Xiamen 361021, ChinaDepartment of Physics, School of Science, Jimei University, Xiamen 361021, ChinaDepartment of Physics, School of Science, Jimei University, Xiamen 361021, ChinaDepartment of Physics, School of Science, Jimei University, Xiamen 361021, ChinaDepartment of Physics, School of Science, Jimei University, Xiamen 361021, ChinaDepartment of Physics, School of Science, Jimei University, Xiamen 361021, ChinaThe traditional von Neumann architecture encounters significant limitations in computational efficiency and energy consumption, driving the development of neuromorphic devices. The optoelectronic synaptic device serves as a fundamental hardware foundation for the realization of neuromorphic computing and plays a pivotal role in the development of neuromorphic chips. This study develops a ternary heterojunction synaptic transistor based on perovskite quantum dots to tackle the critical challenge of synaptic weight modulation in organic synaptic devices. Compared to binary heterojunction synaptic transistor, the ternary heterojunction synaptic transistor achieves an enhanced hysteresis window due to the synergistic charge-trapping effects of acceptor material and perovskite quantum dots. The memory window decreases with increasing source-drain voltage (V<sub>DS</sub>) but expands with prolonged program/erase time, demonstrating effective carrier trapping modulation. Furthermore, the device successfully emulates typical photonic synaptic behaviors, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), and the transition from short-term plasticity (STP) to long-term plasticity (LTP). This work provides a simplified strategy for high-performance optoelectronic synaptic transistors, showcasing significant potential for neuromorphic computing and adaptive intelligent systems.https://www.mdpi.com/2079-4991/15/9/688ternary heterojunctionsynaptic transistorsperovskite quantum dotssynergistic trapping |
| spellingShingle | Shuqiong Lan Jinkui Si Wangying Xu Lan Yang Jierui Lin Chen Wu Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum Dots Nanomaterials ternary heterojunction synaptic transistors perovskite quantum dots synergistic trapping |
| title | Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum Dots |
| title_full | Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum Dots |
| title_fullStr | Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum Dots |
| title_full_unstemmed | Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum Dots |
| title_short | Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum Dots |
| title_sort | ternary heterojunction synaptic transistors based on perovskite quantum dots |
| topic | ternary heterojunction synaptic transistors perovskite quantum dots synergistic trapping |
| url | https://www.mdpi.com/2079-4991/15/9/688 |
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