Halloysite-Nanotube-Mediated High-Flux γ-Al<sub>2</sub>O<sub>3</sub> Ultrafiltration Membranes for Semiconductor Wastewater Treatment
The wastewater from Chemical Mechanical Polishing (CMP) generated in the semiconductor industry contains a significant concentration of suspended particles and necessitates rigorous treatment to meet environmental standards. Ceramic ultrafiltration membranes offer significant advantages in treating...
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MDPI AG
2025-04-01
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| Series: | Membranes |
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| Online Access: | https://www.mdpi.com/2077-0375/15/5/130 |
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| author | Shining Geng Dazhi Chen Zhenghua Guo Qian Li Manyu Wen Jiahui Wang Kaidi Guo Jing Wang Yu Wang Liang Yu Xinglong Li Xiaohu Li |
| author_facet | Shining Geng Dazhi Chen Zhenghua Guo Qian Li Manyu Wen Jiahui Wang Kaidi Guo Jing Wang Yu Wang Liang Yu Xinglong Li Xiaohu Li |
| author_sort | Shining Geng |
| collection | DOAJ |
| description | The wastewater from Chemical Mechanical Polishing (CMP) generated in the semiconductor industry contains a significant concentration of suspended particles and necessitates rigorous treatment to meet environmental standards. Ceramic ultrafiltration membranes offer significant advantages in treating such high-solid wastewater, including a high separation efficiency, environmental friendliness, and straightforward cleaning and maintenance. However, the preparation of high-precision ceramic ultrafiltration membranes with a smaller pore size (usually <20 nm) is very complicated, requiring the repeated construction of transition layers, which not only increases the time and economic costs of manufacturing but also leads to an elevated transport resistance. In this work, halloysite nanotubes (HNTs), characterized by their high aspect ratio and lumen structure, were utilized to create a high-porosity transition layer using a spray-coating technique, onto which a γ-Al<sub>2</sub>O<sub>3</sub> ultrafiltration selective layer was subsequently coated. Compared to the conventional α-Al<sub>2</sub>O<sub>3</sub> transition multilayers, the HNTs-derived transition layer not only had an improved porosity but also had a reduced pore size. As such, this strategy tended to simplify the preparation process for the ceramic membranes while reducing the transport resistance. The resulting high-flux γ-Al<sub>2</sub>O<sub>3</sub> ultrafiltration membranes were used for the high-efficiency treatment of CMP wastewater, and the fouling behaviors were investigated. As expected, the HNTs-mediated γ-Al<sub>2</sub>O<sub>3</sub> ultrafiltration membranes exhibited excellent water flux (126 LMH) and high rejection (99.4%) of inorganic particles in different solvent systems. In addition, such membranes demonstrated good operation stability and regeneration performance, showing promise for their application in the high-efficiency treatment of CMP wastewater in the semiconductor industry. |
| format | Article |
| id | doaj-art-4dceb82cb4d54dcb95db3ef1b73974b8 |
| institution | Kabale University |
| issn | 2077-0375 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Membranes |
| spelling | doaj-art-4dceb82cb4d54dcb95db3ef1b73974b82025-08-20T03:47:57ZengMDPI AGMembranes2077-03752025-04-0115513010.3390/membranes15050130Halloysite-Nanotube-Mediated High-Flux γ-Al<sub>2</sub>O<sub>3</sub> Ultrafiltration Membranes for Semiconductor Wastewater TreatmentShining Geng0Dazhi Chen1Zhenghua Guo2Qian Li3Manyu Wen4Jiahui Wang5Kaidi Guo6Jing Wang7Yu Wang8Liang Yu9Xinglong Li10Xiaohu Li11Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Key Laboratory of Cluster Science, Ministry of Education, Advanced Technology Research Institute (Jinan), Beijing Institute of Technology Chongqing Innovation Center, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaBeijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Key Laboratory of Cluster Science, Ministry of Education, Advanced Technology Research Institute (Jinan), Beijing Institute of Technology Chongqing Innovation Center, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaBeijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Key Laboratory of Cluster Science, Ministry of Education, Advanced Technology Research Institute (Jinan), Beijing Institute of Technology Chongqing Innovation Center, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaBeijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Key Laboratory of Cluster Science, Ministry of Education, Advanced Technology Research Institute (Jinan), Beijing Institute of Technology Chongqing Innovation Center, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaBeijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Key Laboratory of Cluster Science, Ministry of Education, Advanced Technology Research Institute (Jinan), Beijing Institute of Technology Chongqing Innovation Center, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaBeijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Key Laboratory of Cluster Science, Ministry of Education, Advanced Technology Research Institute (Jinan), Beijing Institute of Technology Chongqing Innovation Center, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaBeijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Key Laboratory of Cluster Science, Ministry of Education, Advanced Technology Research Institute (Jinan), Beijing Institute of Technology Chongqing Innovation Center, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaBeijing Institute of Technology, Zhengzhou Academy of Intelligent Technology, Zhengzhou 450000, ChinaChongqing Advanced Materials Institute (CAMI), Chongqing 408000, ChinaBeijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Key Laboratory of Cluster Science, Ministry of Education, Advanced Technology Research Institute (Jinan), Beijing Institute of Technology Chongqing Innovation Center, Advanced Research Institute of Multidisciplinary Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaGuangdong Guoyu Equipment Co., Ltd., Foshan 528222, ChinaSchool of Materials Science & Engineering, Beihang University, Beijing 102206, ChinaThe wastewater from Chemical Mechanical Polishing (CMP) generated in the semiconductor industry contains a significant concentration of suspended particles and necessitates rigorous treatment to meet environmental standards. Ceramic ultrafiltration membranes offer significant advantages in treating such high-solid wastewater, including a high separation efficiency, environmental friendliness, and straightforward cleaning and maintenance. However, the preparation of high-precision ceramic ultrafiltration membranes with a smaller pore size (usually <20 nm) is very complicated, requiring the repeated construction of transition layers, which not only increases the time and economic costs of manufacturing but also leads to an elevated transport resistance. In this work, halloysite nanotubes (HNTs), characterized by their high aspect ratio and lumen structure, were utilized to create a high-porosity transition layer using a spray-coating technique, onto which a γ-Al<sub>2</sub>O<sub>3</sub> ultrafiltration selective layer was subsequently coated. Compared to the conventional α-Al<sub>2</sub>O<sub>3</sub> transition multilayers, the HNTs-derived transition layer not only had an improved porosity but also had a reduced pore size. As such, this strategy tended to simplify the preparation process for the ceramic membranes while reducing the transport resistance. The resulting high-flux γ-Al<sub>2</sub>O<sub>3</sub> ultrafiltration membranes were used for the high-efficiency treatment of CMP wastewater, and the fouling behaviors were investigated. As expected, the HNTs-mediated γ-Al<sub>2</sub>O<sub>3</sub> ultrafiltration membranes exhibited excellent water flux (126 LMH) and high rejection (99.4%) of inorganic particles in different solvent systems. In addition, such membranes demonstrated good operation stability and regeneration performance, showing promise for their application in the high-efficiency treatment of CMP wastewater in the semiconductor industry.https://www.mdpi.com/2077-0375/15/5/130chemical mechanical polishing wastewaterceramic membranehalloysite nanotubeshigh fluxultrafiltration |
| spellingShingle | Shining Geng Dazhi Chen Zhenghua Guo Qian Li Manyu Wen Jiahui Wang Kaidi Guo Jing Wang Yu Wang Liang Yu Xinglong Li Xiaohu Li Halloysite-Nanotube-Mediated High-Flux γ-Al<sub>2</sub>O<sub>3</sub> Ultrafiltration Membranes for Semiconductor Wastewater Treatment Membranes chemical mechanical polishing wastewater ceramic membrane halloysite nanotubes high flux ultrafiltration |
| title | Halloysite-Nanotube-Mediated High-Flux γ-Al<sub>2</sub>O<sub>3</sub> Ultrafiltration Membranes for Semiconductor Wastewater Treatment |
| title_full | Halloysite-Nanotube-Mediated High-Flux γ-Al<sub>2</sub>O<sub>3</sub> Ultrafiltration Membranes for Semiconductor Wastewater Treatment |
| title_fullStr | Halloysite-Nanotube-Mediated High-Flux γ-Al<sub>2</sub>O<sub>3</sub> Ultrafiltration Membranes for Semiconductor Wastewater Treatment |
| title_full_unstemmed | Halloysite-Nanotube-Mediated High-Flux γ-Al<sub>2</sub>O<sub>3</sub> Ultrafiltration Membranes for Semiconductor Wastewater Treatment |
| title_short | Halloysite-Nanotube-Mediated High-Flux γ-Al<sub>2</sub>O<sub>3</sub> Ultrafiltration Membranes for Semiconductor Wastewater Treatment |
| title_sort | halloysite nanotube mediated high flux γ al sub 2 sub o sub 3 sub ultrafiltration membranes for semiconductor wastewater treatment |
| topic | chemical mechanical polishing wastewater ceramic membrane halloysite nanotubes high flux ultrafiltration |
| url | https://www.mdpi.com/2077-0375/15/5/130 |
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