Two-channel microwave power switch construction on the basis of electrically active semiconductor structures
When constructing the fast-acting two-channel microwave switch, it is difficult to use p–i–n-diodes due to inertia of processes in such structures at change of control voltage polarity for providing of deep modulation. Under the practical realization of the microwave switches on p–i–n-diodes, the re...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2014-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | https://tkea.com.ua/index.php/journal/article/view/320 |
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