High-Quality Epitaxial Cobalt-Doped GaN Nanowires on Carbon Paper for Stable Lithium-Ion Storage
Due to its distinctive structure and unique physicochemical properties, gallium nitride (GaN) has been considered a prospective candidate for lithium storage materials. However, its inferior conductivity and unsatisfactory cycle performance hinder the further application of GaN as a next-generation...
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2024-11-01
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| Series: | Molecules |
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| author | Peng Wu Xiaoguang Wang Danchen Wang Yifan Wang Qiuju Zheng Tailin Wang Changlong Sun Dan Liu Fuzhou Chen Sake Wang |
| author_facet | Peng Wu Xiaoguang Wang Danchen Wang Yifan Wang Qiuju Zheng Tailin Wang Changlong Sun Dan Liu Fuzhou Chen Sake Wang |
| author_sort | Peng Wu |
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| description | Due to its distinctive structure and unique physicochemical properties, gallium nitride (GaN) has been considered a prospective candidate for lithium storage materials. However, its inferior conductivity and unsatisfactory cycle performance hinder the further application of GaN as a next-generation anode material for lithium-ion batteries (LIBs). To address this, cobalt (Co)-doped GaN (Co-GaN) nanowires have been designed and synthesized by utilizing the chemical vapor deposition (CVD) strategy. The structural characterizations indicate that the doped Co elements in the GaN nanowires exist as Co<sup>2+</sup> rather than metallic Co. The Co<sup>2+</sup> prominently promotes electrical conductivity and ion transfer efficiency in GaN. The cycling capacity of Co-GaN reached up to 495.1 mA h g<sup>−1</sup> after 100 cycles. After 500 cycles at 10 A g<sup>−1</sup>, excellent cycling capacity remained at 276.6 mA h g<sup>−1</sup>. The intimate contact between Co-GaN nanowires and carbon paper enhances the conductivity of the composite. Density functional theory (DFT) calculations further illustrated that Co substitution changed the electron configuration in the GaN, which led to enhancement of the electron transfer efficiency and a reduction in the ion diffusion barrier on the Co-GaN electrode. This doping design boosts the lithium-ion storage performance of GaN as an advanced material in lithium-ion battery anodes and in other electrochemical applications. |
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| institution | Kabale University |
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| language | English |
| publishDate | 2024-11-01 |
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| spelling | doaj-art-4a070f28df5e4bc29a3c32ce1a527a7f2024-11-26T18:15:58ZengMDPI AGMolecules1420-30492024-11-012922542810.3390/molecules29225428High-Quality Epitaxial Cobalt-Doped GaN Nanowires on Carbon Paper for Stable Lithium-Ion StoragePeng Wu0Xiaoguang Wang1Danchen Wang2Yifan Wang3Qiuju Zheng4Tailin Wang5Changlong Sun6Dan Liu7Fuzhou Chen8Sake Wang9College of Sino-German Science and Technology, Qingdao University of Science and Technology, Qingdao 266061, ChinaCollege of Sino-German Science and Technology, Qingdao University of Science and Technology, Qingdao 266061, ChinaCollege of Sino-German Science and Technology, Qingdao University of Science and Technology, Qingdao 266061, ChinaCollege of Sino-German Science and Technology, Qingdao University of Science and Technology, Qingdao 266061, ChinaSchool of Materials Science and Engineering, Qilu University of Technology, Jinan 250353, ChinaSchool of Materials Science and Engineering, Qilu University of Technology, Jinan 250353, ChinaKey Laboratory of Chemical Engineering in South Xinjiang, College of Chemistry and Chemical Engineering, Tarim University, Alar 843300, ChinaSchool of Materials Science and Engineering, Dongguan University of Technology, No. 1, Daxue Rd, Songshan Lake, Dongguan 523403, ChinaKey Laboratory of Chemical Engineering in South Xinjiang, College of Chemistry and Chemical Engineering, Tarim University, Alar 843300, ChinaCollege of Science, Jinling Institute of Technology, Nanjing 211169, ChinaDue to its distinctive structure and unique physicochemical properties, gallium nitride (GaN) has been considered a prospective candidate for lithium storage materials. However, its inferior conductivity and unsatisfactory cycle performance hinder the further application of GaN as a next-generation anode material for lithium-ion batteries (LIBs). To address this, cobalt (Co)-doped GaN (Co-GaN) nanowires have been designed and synthesized by utilizing the chemical vapor deposition (CVD) strategy. The structural characterizations indicate that the doped Co elements in the GaN nanowires exist as Co<sup>2+</sup> rather than metallic Co. The Co<sup>2+</sup> prominently promotes electrical conductivity and ion transfer efficiency in GaN. The cycling capacity of Co-GaN reached up to 495.1 mA h g<sup>−1</sup> after 100 cycles. After 500 cycles at 10 A g<sup>−1</sup>, excellent cycling capacity remained at 276.6 mA h g<sup>−1</sup>. The intimate contact between Co-GaN nanowires and carbon paper enhances the conductivity of the composite. Density functional theory (DFT) calculations further illustrated that Co substitution changed the electron configuration in the GaN, which led to enhancement of the electron transfer efficiency and a reduction in the ion diffusion barrier on the Co-GaN electrode. This doping design boosts the lithium-ion storage performance of GaN as an advanced material in lithium-ion battery anodes and in other electrochemical applications.https://www.mdpi.com/1420-3049/29/22/5428GaNdopedCVD methodlithium-ion batteriesDFT |
| spellingShingle | Peng Wu Xiaoguang Wang Danchen Wang Yifan Wang Qiuju Zheng Tailin Wang Changlong Sun Dan Liu Fuzhou Chen Sake Wang High-Quality Epitaxial Cobalt-Doped GaN Nanowires on Carbon Paper for Stable Lithium-Ion Storage Molecules GaN doped CVD method lithium-ion batteries DFT |
| title | High-Quality Epitaxial Cobalt-Doped GaN Nanowires on Carbon Paper for Stable Lithium-Ion Storage |
| title_full | High-Quality Epitaxial Cobalt-Doped GaN Nanowires on Carbon Paper for Stable Lithium-Ion Storage |
| title_fullStr | High-Quality Epitaxial Cobalt-Doped GaN Nanowires on Carbon Paper for Stable Lithium-Ion Storage |
| title_full_unstemmed | High-Quality Epitaxial Cobalt-Doped GaN Nanowires on Carbon Paper for Stable Lithium-Ion Storage |
| title_short | High-Quality Epitaxial Cobalt-Doped GaN Nanowires on Carbon Paper for Stable Lithium-Ion Storage |
| title_sort | high quality epitaxial cobalt doped gan nanowires on carbon paper for stable lithium ion storage |
| topic | GaN doped CVD method lithium-ion batteries DFT |
| url | https://www.mdpi.com/1420-3049/29/22/5428 |
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