New High-Speed a-Si/c-Si- and a-SiC/c-Si-Based Switches
The electrical and optical characteristics of the new high-speed Al/a-Si/c-Si(p)/c-Si(n+)/Al and Al/a- SiC/c-Si(p)/c-Si(n+)/Al optically controlled switches are presented in this paper. These switches exhibit the lowest ever reported values of rise and fall times, for this kind of switches, of about...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1996-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1996/56983 |
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| _version_ | 1841524718804402176 |
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| author | E. I. Dimitriadis D. Girginoudi N. Georgoulas A. Thanailakis |
| author_facet | E. I. Dimitriadis D. Girginoudi N. Georgoulas A. Thanailakis |
| author_sort | E. I. Dimitriadis |
| collection | DOAJ |
| description | The electrical and optical characteristics of the new high-speed Al/a-Si/c-Si(p)/c-Si(n+)/Al and Al/a-
SiC/c-Si(p)/c-Si(n+)/Al optically controlled switches are presented in this paper. These switches exhibit
the lowest ever reported values of rise and fall times, for this kind of switches, of about 3ns. They also
exhibit a temperature and light reversibly controlled forward breakover voltage (VBF), together with
high values of light triggering sensitivity. |
| format | Article |
| id | doaj-art-47341c9cf91c4055863af63aec5e63f1 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1996-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-47341c9cf91c4055863af63aec5e63f12025-02-03T05:47:29ZengWileyActive and Passive Electronic Components0882-75161563-50311996-01-01191597110.1155/1996/56983New High-Speed a-Si/c-Si- and a-SiC/c-Si-Based SwitchesE. I. Dimitriadis0D. Girginoudi1N. Georgoulas2A. Thanailakis3Laboratory of Electrical and Electronic Materials Technology, Department of Electrical and Computer Engineering, Democritus University of Thrace, Xanthi 67100, GreeceLaboratory of Electrical and Electronic Materials Technology, Department of Electrical and Computer Engineering, Democritus University of Thrace, Xanthi 67100, GreeceLaboratory of Electrical and Electronic Materials Technology, Department of Electrical and Computer Engineering, Democritus University of Thrace, Xanthi 67100, GreeceLaboratory of Electrical and Electronic Materials Technology, Department of Electrical and Computer Engineering, Democritus University of Thrace, Xanthi 67100, GreeceThe electrical and optical characteristics of the new high-speed Al/a-Si/c-Si(p)/c-Si(n+)/Al and Al/a- SiC/c-Si(p)/c-Si(n+)/Al optically controlled switches are presented in this paper. These switches exhibit the lowest ever reported values of rise and fall times, for this kind of switches, of about 3ns. They also exhibit a temperature and light reversibly controlled forward breakover voltage (VBF), together with high values of light triggering sensitivity.http://dx.doi.org/10.1155/1996/56983 |
| spellingShingle | E. I. Dimitriadis D. Girginoudi N. Georgoulas A. Thanailakis New High-Speed a-Si/c-Si- and a-SiC/c-Si-Based Switches Active and Passive Electronic Components |
| title | New High-Speed a-Si/c-Si- and
a-SiC/c-Si-Based Switches |
| title_full | New High-Speed a-Si/c-Si- and
a-SiC/c-Si-Based Switches |
| title_fullStr | New High-Speed a-Si/c-Si- and
a-SiC/c-Si-Based Switches |
| title_full_unstemmed | New High-Speed a-Si/c-Si- and
a-SiC/c-Si-Based Switches |
| title_short | New High-Speed a-Si/c-Si- and
a-SiC/c-Si-Based Switches |
| title_sort | new high speed a si c si and a sic c si based switches |
| url | http://dx.doi.org/10.1155/1996/56983 |
| work_keys_str_mv | AT eidimitriadis newhighspeedasicsiandasiccsibasedswitches AT dgirginoudi newhighspeedasicsiandasiccsibasedswitches AT ngeorgoulas newhighspeedasicsiandasiccsibasedswitches AT athanailakis newhighspeedasicsiandasiccsibasedswitches |